검색결과 : 10건
| No. | Article |
|---|---|
| 1 |
Metamorphic heterojunction bipolar transistors and P-I-N photodiodes on GaAs substrates prepared by molecular beam epitaxy Hoke WE, Lemonias PJ, Kennedy TD, Torabi A, Tong EK, Bourque RJ, Jang JH, Cueva G, Dumka DC, Adesida I, Chang KL, Hsieh KC Journal of Vacuum Science & Technology B, 19(4), 1505, 2001 |
| 2 |
Molecular beam epitaxial growth and characterization of strain-compensated Al0.3In0.7P/InP/Al0.3In0.7P metamorphic-pseudomorphic high electron mobility transistors on GaAs substrates Hoke WE, Lemonias PJ, Kennedy TD, Torabi A, Tong EK, Chang KL, Hsieh KC Journal of Vacuum Science & Technology B, 19(4), 1519, 2001 |
| 3 |
Molecular beam epitaxial growth and device performance of metamorphic high electron mobility transistor structures fabricated on GaAs substrates Hoke WE, Lemonias PJ, Mosca JJ, Lyman PS, Torabi A, Marsh PF, McTaggart RA, Lardizabal SM, Hetzler K Journal of Vacuum Science & Technology B, 17(3), 1131, 1999 |
| 4 |
Practical aspects of solid source molecular beam epitaxial growth of phosphorus-containing films Hoke WE, Lemonias PJ Journal of Vacuum Science & Technology B, 17(5), 2009, 1999 |
| 5 |
Solid source molecular beam epitaxial growth of In0.5Ga0.5P pseudomorphic high electron mobility transistor structures Hoke WE, Lemonias PJ, Beaudoin RM, Torabi A Journal of Vacuum Science & Technology B, 16(3), 1408, 1998 |
| 6 |
Reduction of oxygen contamination in InGaP and AlGaInP films grown by solid source molecular beam epitaxy Hoke WE, Lemonias PJ, Torabi A Journal of Vacuum Science & Technology B, 16(6), 3041, 1998 |
| 7 |
In1-Xalxp/InAlAs/InGaAs and InAlAs/Inas0.3P0.7 High-Electron-Mobility Transistor Structures Grown by Solid Source Molecular-Beam Epitaxy Hoke WE, Lemonias PJ, Weir DG, Hendriks HT, Chou LJ, Hsieh KC Journal of Vacuum Science & Technology B, 14(3), 2233, 1996 |
| 8 |
Thermally Stable Auge-Au Ohmic Contacts for Single Doped InP High-Electron-Mobility Transistor Structures Mctaggart RA, Hur KY, Lemonias PJ, Hoke WE, Aucoin LM Journal of Vacuum Science & Technology B, 13(1), 163, 1995 |
| 9 |
Solid Source Molecular-Beam Epitaxial-Growth of Ga0.5In0.5P Using a Valved, 3-Zone Phosphorus Source Hoke WE, Weir DG, Lemonias PJ, Hendriks HT, Jackson GS, Colombo P Journal of Vacuum Science & Technology B, 13(2), 733, 1995 |
| 10 |
Carbon P+ Doping of Molecular-Beam Epitaxial GaAs Films Using Carbon Tetrabromide Lemonias PJ, Hoke WE, Weir DG, Hendriks HT Journal of Vacuum Science & Technology B, 12(2), 1190, 1994 |