검색결과 : 9건
| No. | Article |
|---|---|
| 1 |
Atomic Layer Deposition of Hafnium Silicate Thin Films Using Tetrakis(diethylamido)hafnium and Tris(2-methyl-2-butoxy)silanol Liu J, Lennard WN, Goncharova LV, Landheer D, Wu XH, Rushworth SA, Jones AC Journal of the Electrochemical Society, 156(8), G89, 2009 |
| 2 |
Range of Er ions in amorphous Si Liu J, Lennard WN, Lee JK Applied Surface Science, 253(2), 937, 2006 |
| 3 |
Depth profiling of ultrathin films using medium energy ion scattering Kim J, Lennard WN, McNorgan CP, Hendriks J, Mitchell IV, Landheer D, Gredley J Current Applied Physics, 3(1), 75, 2003 |
| 4 |
Ultrathin zirconium silicate films deposited on Si(100) using Zr(O-i-Pr)(2)(thd)(2), Si(O-t-Bu)(2)(thd)(2), and nitric oxide Chen HW, Huang TY, Landheer D, Wu X, Moisa S, Sproule GI, Kim JK, Lennard WN, Chao TS Journal of the Electrochemical Society, 150(7), C465, 2003 |
| 5 |
Interfacial layer formation in Gd2O3 films deposited directly on Si(001) Gupta JA, Landheer D, Sproule GI, McCaffrey JP, Graham MJ, Yang KC, Lu ZH, Lennard WN Applied Surface Science, 173(3-4), 318, 2001 |
| 6 |
Characterization of Gd2O3 films deposited on Si(100) by electron-beam evaporation Landheer D, Gupta JA, Sproule GI, McCaffrey JP, Graham MJ, Yang KC, Lu ZH, Lennard WN Journal of the Electrochemical Society, 148(2), G29, 2001 |
| 7 |
Analysis of silicon-oxide-silicon nitride stacks by medium-energy ion scattering Ladheer D, Ma P, Lennard WN, Mitchell IV, McNorgan C Journal of Vacuum Science & Technology A, 18(5), 2503, 2000 |
| 8 |
Characterization of Carbon and Carbon Nitride Thin-Films Using Time-of-Flight Secondary-Ion Mass-Spectrometry Huang LJ, Hung Y, Chang S, Massoumi GR, Lennard WN, Mitchell IV Journal of Vacuum Science & Technology A, 15(4), 2196, 1997 |
| 9 |
Structure of the Sinx/GaAs (110) Interface Modified with Ultrathin Si and Sulfur Passivation Huang LJ, Lau WM, Tang HT, Lennard WN, Mitchell IV, Landheer D, Baribeau JM, Ingrey S Journal of Vacuum Science & Technology B, 14(4), 2895, 1996 |