화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 Analysis of trap-assisted tunneling in vertical Si homo-junction and SiGe hetero-junction Tunnel-FETs
Vandooren A, Leonelli D, Rooyackers R, Hikavyy A, Devriendt K, Demand M, Loo R, Groeseneken G, Huyghebaert C
Solid-State Electronics, 83, 50, 2013
2 Impact of process and geometrical parameters on the electrical characteristics of vertical nanowire silicon n-TFETs
Vandooren A, Leonelli D, Rooyackers R, Arstila K, Groeseneken G, Huyghebaert C
Solid-State Electronics, 72, 82, 2012
3 Temperature impact on the tunnel fet off-state current components
Agopian PGD, Martino MD, dos Santos SG, Martino JA, Rooyackers R, Leonelli D, Claeys C
Solid-State Electronics, 78, 141, 2012
4 Drive current enhancement in p-tunnel FETs by optimization of the process conditions
Leonelli D, Vandooren A, Rooyackers R, De Gendt S, Heyns MM, Groeseneken G
Solid-State Electronics, 65-66, 28, 2011