검색결과 : 17건
No. | Article |
---|---|
1 |
Defects in Ge epitaxy in trench patterned SiO2 on Si and Ge substrates Leonhardt D, Ghosh S, Han SM Journal of Crystal Growth, 335(1), 62, 2011 |
2 |
Removal of stacking faults in Ge grown on Si through nanoscale openings in chemical SiO2 Leonhardt D, Sheng J, Cederberg JG, Carroll MS, Li QM, Romero MJ, Kuciauskas D, Friedman DJ, Han SM Thin Solid Films, 519(22), 7664, 2011 |
3 |
GaAs/Si epitaxial integration utilizing a two-step, selectively grown Ge intermediate layer Cederberg JG, Leonhardt D, Sheng JJ, Li QM, Carroll MS, Han SM Journal of Crystal Growth, 312(8), 1291, 2010 |
4 |
Nanoscale interfacial engineering to grow Ge on Si as virtual substrates and subsequent integration of GaAs Leonhardt D, Sheng J, Cederberg JG, Li QM, Carroll MS, Han SM Thin Solid Films, 518(21), 5920, 2010 |
5 |
Comparison of electrolyte performance for Ta2O5 thin films produced by pulsed and continuous wave PECVD Seman MT, Robbins JJ, Leonhardt D, Agarwal S, Wolden CA Journal of the Electrochemical Society, 155(6), J168, 2008 |
6 |
Study of photoresist etching and roughness formation in electron-beam generated plasmas Orf BJ, Walton SG, Leonhardt D, Oehrlein GS Journal of Vacuum Science & Technology B, 25(3), 779, 2007 |
7 |
Control of plasma flux composition incident on TiN films during reactive magnetron sputtering and the effect on film microstructure Muratore C, Walton SG, Leonhardt D, Fernsler RF Journal of Vacuum Science & Technology A, 24(1), 25, 2006 |
8 |
Effect of plasma flux, composition on the nitriding rate of stainless steel Muratore C, Walton SG, Leonhardt D, Fernsler RF, Blackwell DD, Meger RA Journal of Vacuum Science & Technology A, 22(4), 1530, 2004 |
9 |
Etching with electron beam generated plasmas Leonhardt D, Walton SG, Muratore C, Fernsler RF, Meger RA Journal of Vacuum Science & Technology A, 22(6), 2276, 2004 |
10 |
Ion energy distributions in a pulsed, electron beam-generated plasma Walton SG, Leonhardt D, Blackwell DD, Fernsler RF, Murphy DP, Meger RA Journal of Vacuum Science & Technology A, 19(4), 1325, 2001 |