검색결과 : 7건
| No. | Article |
|---|---|
| 1 |
Characterization of HfO2 dielectric films with low energy SIMS Jiang ZX, Kim K, Lerma J, Sieloff D, Tseng H, Hegde RI, Luo TY, Yang JY, Triyoso DH, Tobin PJ Applied Surface Science, 252(19), 7172, 2006 |
| 2 |
Quantitative SIMS analysis of SiGe composition with low energy O-2(+) beams Jiang ZX, Kim K, Lerma J, Corbett A, Sieloff D, Kottke M, Gregory R, Schauer S Applied Surface Science, 252(19), 7262, 2006 |
| 3 |
Characterization of nitrogen distribution in HfO2 with low energy secondary ion mass spectrometry Jiang ZX, Kim K, Lerma J, Sieloff D, Luo TY, Yang JY, Triyoso D, Tseng H, Tobin P, Ramani N Journal of Vacuum Science & Technology A, 23(4), 589, 2005 |
| 4 |
Secondary ion mass spectrometry characterization of source/drain junctions for strained silicon channel metal-oxide-semiconductor field-effect transistors Duda E, Lu SF, Liu CL, Jiang ZX, Lerma J, Barr A, Thean A, Orlowski M, White T, Nguyen BY Journal of Vacuum Science & Technology B, 22(1), 327, 2004 |
| 5 |
Ultrahigh resolution secondary ion mass spectrometry profiling with oblique O-2(+) beams below 200 eV Jiang ZX, Lerma J, Sieloff D, Lee JJ, Backer S, Bagchi S, Conner J Journal of Vacuum Science & Technology B, 22(2), 630, 2004 |
| 6 |
Characterization of advanced complementary metal-oxide-semiconductor processes with reverse secondary ion mass spectrometry profiling Jiang ZX, Lerma J, Lee JJ, Sieloff D, Chen S, Beck J, Backer S, Taylor W, Tseng H, Tobin P, Svedberg L Journal of Vacuum Science & Technology B, 21(4), 1487, 2003 |
| 7 |
Reduction in surface roughness during secondary ion mass spectrometry depth profiling with an ion-milling method Jiang ZX, Backer S, Chen S, Lerma J, Guenther T, Lee JJ, Sieloff D Journal of Vacuum Science & Technology B, 19(6), 2304, 2001 |