화학공학소재연구정보센터
검색결과 : 2건
No. Article
1 Scaling of high-kappa/metal-gate TriGate SOI nanowire transistors down to 10 nm width
Coquand R, Barraud S, Casse M, Leroux P, Vizioz C, Comboroure C, Perreau P, Ernst E, Samson MP, Maffini-Alvaro V, Tabone C, Barnola S, Munteanu D, Ghibaudo G, Monfray S, Boeuf F, Poiroux T
Solid-State Electronics, 88, 32, 2013
2 Effect of rotation, gate-dielectric and SEG on the noise behavior of advanced SOI MuGFETs
Put S, Mehta H, Collaert N, Van Uffelen M, Leroux P, Claeys C, Lukyanchikova N, Simoen E
Solid-State Electronics, 54(2), 178, 2010