검색결과 : 14건
| No. | Article |
|---|---|
| 1 |
Stability of the intermediate band energy position upon temperature changes in GaNP and GaNPAs Welna M, Zelazna K, Letoublon A, Cornet C, Kudrawiec R Solar Energy Materials and Solar Cells, 196, 131, 2019 |
| 2 |
MBE growth and doping of AlGaP Tremblay R, Burin JP, Rohel T, Gauthier JP, Almosni S, Quinci T, Letoublon A, Leger Y, Le Corre A, Bertru N, Durand O, Cornet C Journal of Crystal Growth, 466, 6, 2017 |
| 3 |
Correlations between electrical and optical properties in lattice-matched GaAsPN/GaP solar cells Almosni S, Rale P, Cornet C, Perrin M, Lombez L, Letoublon A, Tavernier K, Levallois C, Rohel T, Bertru N, Guillemoles JF, Durand O Solar Energy Materials and Solar Cells, 147, 53, 2016 |
| 4 |
European Materials Research Society Spring Meeting 2015, Symposium DD [E'MRS 2015 Symp. DD] Preface Modreanu M, Durand O, Jellison GE, Salviati G, Letoublon A Thin Solid Films, 617, 1, 2016 |
| 5 |
Nitrogen-phosphorus competition in the molecular beam epitaxy of GaPN Kuyyalil J, Thanh TN, Quinci T, Almosni S, Letoublon A, Rohel T, Bertru N, Le Corre A, Durand O, Cornet C Journal of Crystal Growth, 377, 17, 2013 |
| 6 |
Quantitative study of microtwins in GaP/Si thin film and GaAsPN quantum wells grown on silicon substrates Thanh TN, Robert C, Giudicelli E, Letoublon A, Cornet C, Ponchet A, Rohel T, Balocchi A, Micha JS, Perrin M, Loualiche S, Marie X, Bertru N, Durand O, Le Corre A Journal of Crystal Growth, 378, 25, 2013 |
| 7 |
Defects limitation in epitaxial GaP on bistepped Si surface using UHVCVD-MBE growth cluster Quinci T, Kuyyalil J, Thanh TN, Wang YP, Almosni S, Letoublon A, Rohel T, Tavernier K, Chevalier N, Dehaese O, Boudet N, Berar JF, Loualiche S, Even J, Bertru N, Le Corre A, Durand O, Cornet C Journal of Crystal Growth, 380, 157, 2013 |
| 8 |
Synchrotron X-ray diffraction analysis for quantitative defect evaluation in GaP/Si nanolayers Thanh TN, Robert C, Letoublon A, Cornet C, Quinci T, Giudicelli E, Almosni S, Boudet N, Ponchet A, Kuyyalil J, Danila M, Durand O, Bertru N, Le Corre A Thin Solid Films, 541, 36, 2013 |
| 9 |
Raman investigation of GaP-Si interfaces grown by molecular beam epitaxy Bondi A, Cornet C, Boyer S, Thanh TN, Letoublon A, Pedesseau L, Durand O, Moreac A, Ponchet A, Le Corre A, Even J Thin Solid Films, 541, 72, 2013 |
| 10 |
Structural and optical properties of AlGaP confinement layers and InGaAs quantum dot light emitters onto GaP substrate: Towards photonics on silicon applications Robert C, Thanh TN, Letoublon A, Perrin M, Cornet C, Levallois C, Jancu JM, Even J, Turban P, Balocchi A, Marie X, Durand O, Le Corre A Thin Solid Films, 541, 87, 2013 |