검색결과 : 7건
| No. | Article |
|---|---|
| 1 |
X-ray characterization technique for the assessment of surface damage in GaN wafers Letts E, Sun YM, Key D, Jordan B, Hashimoto T Journal of Crystal Growth, 501, 13, 2018 |
| 2 |
Reduction of crack density in ammonothermal bulk GaN growth Letts E, Key D, Hashimoto T Journal of Crystal Growth, 456, 27, 2016 |
| 3 |
Development of GaN wafers via the ammonothermal method Letts E, Hashimoto T, Hoff S, Key D, Male K, Michaels M Journal of Crystal Growth, 403, 3, 2014 |
| 4 |
Defect structure of a free standing GaN wafer grown by the ammonothermal method Sintonen S, Suihkonen S, Jussila H, Lipsanen H, Tuomi TO, Letts E, Hoff S, Hashimoto T Journal of Crystal Growth, 406, 72, 2014 |
| 5 |
Development of GaN wafers for solid-state lighting via the ammonothermal method Letts E, Hashimoto T, Ikari M, Nojima Y Journal of Crystal Growth, 350(1), 66, 2012 |
| 6 |
Improvement of structural quality in the initial stage of GaN growth by basic ammonothermal method Nojima Y, Ikari M, Letts E, Hashimoto T Journal of Crystal Growth, 317(1), 132, 2011 |
| 7 |
Improvement of crystal quality in ammonothermal growth of bulk GaN Hashimoto T, Letts E, Ikari M, Nojima Y Journal of Crystal Growth, 312(18), 2503, 2010 |