검색결과 : 28건
| No. | Article |
|---|---|
| 1 |
Minority carrier injection and current-voltage characteristics of Schottky diodes at high injection level Mnatsakanov TT, Levinshtein ME, Tandoev AG, Yurkov SN, Palmour JW Solid-State Electronics, 121, 41, 2016 |
| 2 |
Transient collector modulation of 4H-SiC BJTs during switch-on process Yuferev VS, Levinshtein ME, Ivanov PA, Zhang JQ, Palmour JW Solid-State Electronics, 123, 130, 2016 |
| 3 |
1/f noise in forward biased high voltage 4H-SiC Schottky diodes Shabunina EI, Levinshtein ME, Shmidt NM, Ivanov PA, Palmour JW Solid-State Electronics, 96, 44, 2014 |
| 4 |
Physical limitations of the diffusive approximation in semiconductor device modeling Mnatsakanov TT, Tandoev AG, Levinshtein ME, Yurkov SN Solid-State Electronics, 56(1), 60, 2011 |
| 5 |
Self-heating and destruction of high-voltage 4H-SiC rectifier diodes under a single short current surge pulse Levinshtein ME, Ivanov PA, Mnatsakanov TT, Palmour JW, Das MK, Hull BA Solid-State Electronics, 52(11), 1802, 2008 |
| 6 |
Steady state self-heating and dc current-voltage characteristics of high-voltage 4H-SiC p(+)-n-n(+) rectifier diodes Levinshtein ME, Mnatsakanov TT, Vanov PA, Palmour JW, Das MK, Hull BA Solid-State Electronics, 51(6), 955, 2007 |
| 7 |
High power 4H-SiC pin diodes (10 kV class) with record high carrier lifetime Ivanov PA, Levinshtein ME, Palmour JW, Das MK, Hull BA Solid-State Electronics, 50(7-8), 1368, 2006 |
| 8 |
Steady-state and transient characteristics of high-voltage 4H-SiC junction diodes Ivanov PA, Levinshtein ME, Mnatsakanov TT, Palmour JW, Singh R, Irvin KG, Das M Materials Science Forum, 483, 973, 2005 |
| 9 |
On the homogeneity of the turn-on process in high-voltage 4H-SiC thyristors Levinshtein ME, Ivanov PA, Agarwal AK, Palmour JW Solid-State Electronics, 49(2), 233, 2005 |
| 10 |
High-temperature (up to 773 K) operation of 6-kV 4H-SiC junction diodes Levinshtein ME, Ivanov PA, Boltovets MS, Krivutsa VA, Palmour JW, Das MK, Hull BA Solid-State Electronics, 49(7), 1228, 2005 |