화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 ZnO epitaxial layers grown on nitridated Si(100) substrate with HT-GaN/LT-ZnO double buffer
Chang SP, Chang SJ, Chiou YZ, Lu CY, Lin TK, Kuo CF, Chang HM, Liaw UH
Journal of Crystal Growth, 310(2), 290, 2008
2 Influence of process flow on the characteristics of strained-Si nMOSFETs
Lam KT, Wu SL, Chang SJ, Wang YP, Liaw UH
Electrochemical and Solid State Letters, 10(11), H331, 2007
3 Al0.22Ga0.78N/GaN HFETs prepared on vicinal-cut sapphire substrates
Lam KT, Yu CL, Chang PC, Liaw UH, Lin JC, Chang SJ
Journal of the Electrochemical Society, 154(9), H811, 2007
4 Effects of O-2 thermal annealing on the properties of CVD Ta2O5 thin films
Lee JS, Chang SJ, Chen JF, Sun SC, Liu CH, Liaw UH
Materials Chemistry and Physics, 77(1), 242, 2003