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| No. | Article |
|---|---|
| 1 |
50 nm InGaAs/InAlAs/GaAs metamorphic high electron mobility transistors using double exposure at 50 kV electron-beam lithography without dielectric support Kim SC, Lim OK, Lee HS, Baek TJ, Shin DH, Rhee JK Journal of Vacuum Science & Technology B, 22(4), 1807, 2004 |