화학공학소재연구정보센터
검색결과 : 9건
No. Article
1 A manufacturable process integration approach for graphene devices
Vaziri S, Lupina G, Paussa A, Smith AD, Henkel C, Lippert G, Dabrowski J, Mehr W, Ostling M, Lemme MC
Solid-State Electronics, 84, 185, 2013
2 Morphology and composition of selected high-k materials and their relevance to dielectric properties of thin films
Dabrowski J, Lippert G, Oberbeck L, Schroder U, Costina I, Lupina G, Ratzke M, Zaumseil P, Muessig HJ
Journal of the Electrochemical Society, 155(5), G97, 2008
3 A CMOS process-compatible wet-etching recipe for the high-k gate dielectrics Pr2O3 and Pr2-xTixO3
Mane AU, Wenger C, Schroeder T, Zaumseil P, Lippert G, Weidner G, Mussig HJ
Journal of the Electrochemical Society, 152(6), C399, 2005
4 Effects of carbon on boron diffusion in SiGe : Principles and impact on bipolar devices
Osten HJ, Heinemann B, Knoll D, Lippert G, Rucker H
Journal of Vacuum Science & Technology B, 16(3), 1750, 1998
5 Carbon-containing group IV heterostructures on Si : properties and device applications
Osten HJ, Barth R, Fischer G, Heinemann B, Knoll D, Lippert G, Rucker H, Schley P, Ropke W
Thin Solid Films, 321(1-2), 11, 1998
6 Optimized processing for differentially molecular beam epitaxy-grown SiGe(C) devices
Lippert G, Osten HJ, Blum K, Sorge R, Schley P, Kruger D, Fischer G
Thin Solid Films, 321(1-2), 21, 1998
7 Ternary Sigec Alloys - Growth and Properties of a New Semiconducting Material
Osten HJ, Kim M, Lippert G, Zaumseil P
Thin Solid Films, 294(1-2), 93, 1997
8 Response Function Basis-Sets - Application to Density-Functional Calculations
Lippert G, Hutter J, Ballone P, Parrinello M
Journal of Physical Chemistry, 100(15), 6231, 1996
9 Soft Cleaning by in Vacuo Ultraviolet-Radiation Combined with Molecular-Hydrogen Gas Before Molecular-Beam Epitaxial Layer Growth
Lippert G, Thieme HJ, Osten HJ
Journal of the Electrochemical Society, 142(1), 191, 1995