| 1 |
Effect of substitutional As impurity on electrical and optical properties of beta-Si3N4 structure
Kutlu E, Narin P, Atmaca G, Sarikavak-Lisesivdin B, Lisesivdin SB, Ozbay E
Materials Research Bulletin, 83, 128, 2016 |
| 2 |
Scattering analysis of 2DEG mobility in undoped and doped AlGaN/AlN/GaN heterostructures with an in situ Si3N4 passivation layer
Atmaca G, Ardali S, Tiras E, Malin T, Mansurov VG, Zhuravlev KS, Lisesivdin SB
Solid-State Electronics, 118, 12, 2016 |
| 3 |
The effect of InxGa1-xN back-barriers on the dislocation densities in Al0.31Ga0.69N/AlN/GaN/InxGa1-xN/GaN heterostructures (0.05 <= x <= 0.14)
Sarikavak-Lisesivdin B, Lisesivdin SB, Ozbay E
Current Applied Physics, 13(1), 224, 2013 |
| 4 |
Determination of the critical indium composition corresponding to the metal-insulator transition in InxGa1-xN (0.06 <= x <= 0.135) layers
Yildiz A, Lisesivdin SB, Tasli P, Ozbay E, Kasap M
Current Applied Physics, 10(3), 838, 2010 |
| 5 |
Double subband occupation of the two-dimensional electron gas in InxAl1-xN/AlN/GaN/AlN heterostructures with a low indium content (0.064 <= x <= 0.140) barrier
Lisesivdin SB, Tasli P, Kasap M, Ozturk M, Arslan E, Ozcelik S, Ozbay E
Thin Solid Films, 518(19), 5572, 2010 |
| 6 |
Determination of two-dimensional electron and hole gas carriers in AlGaN/GaN/AlN heterostructures grown by Metal Organic Chemical Vapor Deposition
Acar S, Lisesivdin SB, Kasap M, Ozcelik S, Ozbay E
Thin Solid Films, 516(8), 2041, 2008 |
