검색결과 : 15건
| No. | Article |
|---|---|
| 1 |
Thermal imidization optimization of polyimide thin films using Fourier transform infrared spectroscopy and electrical measurements Diaham S, Locatelli ML, Lebey T, Malec D Thin Solid Films, 519(6), 1851, 2011 |
| 2 |
Characterization of polyimide dielectric layer for the passivation of high electric field and high temperature silicon carbide power devices Zelmat S, Locatelli ML, Lebey T Materials Science Forum, 483, 717, 2005 |
| 3 |
SiC-based current limiter devices Chante JP, Tournier D, Planson D, Raynaud C, Lazar M, Locatelli ML, Brosselard P Materials Science Forum, 457-460, 951, 2004 |
| 4 |
Characteristics of 6H-SiC bipolar JTE diodes realized by sublimation epitaxy and Al implantation Strel'chuk AM, Lebedev AA, Davydov DV, Savkina NS, Kuznetsov AN, Valakh MY, Kiselev VS, Romanyuk BN, Raynaud C, Chante JP, Locatelli ML Materials Science Forum, 457-460, 1133, 2004 |
| 5 |
A comparative study of high-temperature aluminum post-implantation annealing in 6H-and 4H-SiC, non-uniform temperature effects Lazar M, Raynaud C, Planson D, Locatelli ML, Isoird K, Ottaviani L, Chante JP, Nipoti R, Poggi A, Cardinali G Materials Science Forum, 389-3, 827, 2002 |
| 6 |
Study of 4H-SiC high-voltage bipolar diodes under reverse bias using electrical and OBIC characterization Isoird K, Lazar M, Locatelli ML, Raynaud C, Planson D, Chante JP Materials Science Forum, 389-3, 1289, 2002 |
| 7 |
Investigation of Al-implanted 6H-and 4H-SiC layers after fast heating rate annealings Ottaviani L, Lazar M, Locatelli ML, Monteil Y, Heera V, Voelskow M, Skorupa W Applied Surface Science, 184(1-4), 330, 2001 |
| 8 |
Experimental characterization of a 4H-SiC high voltage current limiting device Nallet F, Planson D, Godignon P, Locatelli ML, Lazar M, Chante JP Applied Surface Science, 184(1-4), 404, 2001 |
| 9 |
Study of 6H-SiC high voltage bipolar diodes under reverse biases Isoird K, Lazar M, Ottaviani L, Locatelli ML, Raynaud C, Planson D, Chante JP Applied Surface Science, 184(1-4), 477, 2001 |
| 10 |
High electrical activation of aluminium and nitrogen implanted in 6H-SiC at room temperature by RF annealing Lazar M, Ottaviani L, Locatelli ML, Raynaud C, Planson D, Morvan E, Godignon P, Skorupa W, Chantel JP Materials Science Forum, 353-356, 571, 2001 |