검색결과 : 1건
| No. | Article |
|---|---|
| 1 |
Effect of annealing at argon pressure up to 1.2 GPa hydrogen-plasma-etched and hydrogen-implanted single-crystalline silicon Misiuk A, Bak-Misiuk J, Barez A, Romano-Rodriguez A, Antonova IV, Popov VP, Londos CA, Jun J International Journal of Hydrogen Energy, 26(5), 483, 2001 |