검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
Chemical and morphological modifications of single layer graphene submitted to annealing in water vapor Rolim GK, Correa SA, Galves LA, Lopes JMJ, Soares GV, Radtke C Applied Surface Science, 427, 825, 2018 |
| 2 |
The impact of substrate selection for the controlled growth of graphene by molecular beam epitaxy Schumann T, Lopes JMJ, Wofford JM, Oliveira MH, Dubslaff M, Hanke M, Jahn U, Geelhaar L, Riechert H Journal of Crystal Growth, 425, 274, 2015 |
| 3 |
LaLuO3 higher-kappa dielectric integration in SOI MOSFETs with a gate-first process Nichau A, Ozben ED, Schnee M, Lopes JMJ, Besmehn A, Luysberg M, Knoll L, Habicht S, Mussmann V, Luptak R, Lenk S, Rubio-Zuazo J, Castro GR, Buca D, Zhao QT, Schubert J, Mantl S Solid-State Electronics, 71, 19, 2012 |
| 4 |
Physicochemical and Electrical Properties of LaLuO3/Ge(100) Structures Submitted to Postdeposition Annealings Radtke C, Krug C, Soares GV, Baumvol IJR, Lopes JMJ, Durgun-Ozben E, Nichau A, Schubert J, Mantl S Electrochemical and Solid State Letters, 13(5), G37, 2010 |
| 5 |
Characterization of lanthanum lutetium oxide thin films grown by atomic layer deposition as an alternative gate dielectric Roeckerath M, Heeg T, Lopes JMJ, Schubert J, Mantl S, Besmehn A, Myllymaki P, Niinisto L Thin Solid Films, 517(1), 201, 2008 |