화학공학소재연구정보센터
검색결과 : 29건
No. Article
1 Fabrication of InAs quantum ring nanostructures on GaSb by droplet epitaxy
Dahiya V, Zamiri M, So MG, Hollingshead DA, Kim J, Krishna S
Journal of Crystal Growth, 492, 71, 2018
2 A zero dimensional hybrid organic-inorganic perovskite ZnCl4 based: Synthesis, crystal structure, UV-vis, and electronic properties
El Mrabet R, Kassou S, Tahiri O, Belaaraj A, El Ammari L, Saadi M
Journal of Crystal Growth, 472, 76, 2017
3 In(Ga)As quantum dots on InGaP layers grown by solid-source molecular beam epitaxy
Sugaya T, Oshima R, Matsubara K, Niki S
Journal of Crystal Growth, 378, 430, 2013
4 Optical and structural studies of highly uniform Ge quantum dots on Si (001) substrate grown by solid-source molecular beam epitaxy
Gotoh K, Oshima R, Sugaya T, Sakata I, Matsubara K, Kondo M
Journal of Crystal Growth, 378, 439, 2013
5 An atomic ordering based AlInP unicompositional quantum well grown by MOVPE
Tang XH, Zhao JH, Teng JH, Yong AM
Journal of Crystal Growth, 356, 1, 2012
6 Large single-crystal anatase TiO2 Bipyramids
Deng QX, Wei MD, Ding XK, Jiang LL, Wei KW, Zhou HS
Journal of Crystal Growth, 312(2), 213, 2010
7 Antimony doped whiskers of SnO2 grown from vapor phase
Zaytsev VB, Zhukova AA, Rumyantseva MN, Dobrovolsky AA, Calvo L, Gaskov AM
Journal of Crystal Growth, 312(3), 386, 2010
8 Transport properties of InSb and InAs0.1Sb0.9 thin films sandwiched between Al0.1In0.9Sb layers grown by molecular beam epitaxy
Shibasaki I, Geka H, Okamoto A
Journal of Crystal Growth, 311(7), 1696, 2009
9 Fast carrier relaxation of self-assembled InAs quantum dots embedded in strain-relaxed In0.35Ga0.65As barriers for ultrafast nonlinear optical switching applications
Kitada T, Mukai T, Takahashi T, Morita K, Isu T
Journal of Crystal Growth, 311(7), 1807, 2009
10 High-density GaAs/AlGaAs quantum dots formed on GaAs (311)A substrates by droplet epitaxy
Mano T, Kuroda T, Mitsuishi K, Noda T, Sakoda K
Journal of Crystal Growth, 311(7), 1828, 2009