검색결과 : 29건
No. | Article |
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1 |
Fabrication of InAs quantum ring nanostructures on GaSb by droplet epitaxy Dahiya V, Zamiri M, So MG, Hollingshead DA, Kim J, Krishna S Journal of Crystal Growth, 492, 71, 2018 |
2 |
A zero dimensional hybrid organic-inorganic perovskite ZnCl4 based: Synthesis, crystal structure, UV-vis, and electronic properties El Mrabet R, Kassou S, Tahiri O, Belaaraj A, El Ammari L, Saadi M Journal of Crystal Growth, 472, 76, 2017 |
3 |
In(Ga)As quantum dots on InGaP layers grown by solid-source molecular beam epitaxy Sugaya T, Oshima R, Matsubara K, Niki S Journal of Crystal Growth, 378, 430, 2013 |
4 |
Optical and structural studies of highly uniform Ge quantum dots on Si (001) substrate grown by solid-source molecular beam epitaxy Gotoh K, Oshima R, Sugaya T, Sakata I, Matsubara K, Kondo M Journal of Crystal Growth, 378, 439, 2013 |
5 |
An atomic ordering based AlInP unicompositional quantum well grown by MOVPE Tang XH, Zhao JH, Teng JH, Yong AM Journal of Crystal Growth, 356, 1, 2012 |
6 |
Large single-crystal anatase TiO2 Bipyramids Deng QX, Wei MD, Ding XK, Jiang LL, Wei KW, Zhou HS Journal of Crystal Growth, 312(2), 213, 2010 |
7 |
Antimony doped whiskers of SnO2 grown from vapor phase Zaytsev VB, Zhukova AA, Rumyantseva MN, Dobrovolsky AA, Calvo L, Gaskov AM Journal of Crystal Growth, 312(3), 386, 2010 |
8 |
Transport properties of InSb and InAs0.1Sb0.9 thin films sandwiched between Al0.1In0.9Sb layers grown by molecular beam epitaxy Shibasaki I, Geka H, Okamoto A Journal of Crystal Growth, 311(7), 1696, 2009 |
9 |
Fast carrier relaxation of self-assembled InAs quantum dots embedded in strain-relaxed In0.35Ga0.65As barriers for ultrafast nonlinear optical switching applications Kitada T, Mukai T, Takahashi T, Morita K, Isu T Journal of Crystal Growth, 311(7), 1807, 2009 |
10 |
High-density GaAs/AlGaAs quantum dots formed on GaAs (311)A substrates by droplet epitaxy Mano T, Kuroda T, Mitsuishi K, Noda T, Sakoda K Journal of Crystal Growth, 311(7), 1828, 2009 |