| 1 |
PAPERS FROM THE 36th ANNUAL CONFERENCE ON THE PHYSICS AND CHEMISTRY OF SEMICONDUCTOR INTERFACES (PCSI) Preface
Shanabrook B, Ludeke R
Journal of Vacuum Science & Technology B, 27(4), 1995, 2009 |
| 2 |
Electrostatic field and partial Fermi level pinning at the pentacene-SiO2 interface
Chen LW, Ludeke R, Cui XD, Schrott AG, Kagan CR, Brus LE
Journal of Physical Chemistry B, 109(5), 1834, 2005 |
| 3 |
Surface potential and morphology issues of annealed (HfO2)(x)(SiO2)(1-x) gate oxides
Ludeke R, Lysaght P, Cartier E, Gusev E, Chudzik M, Foran B, Bersuker G
Journal of Vacuum Science & Technology B, 22(4), 2113, 2004 |
| 4 |
Hot carrier transport effects in Al2O3-based metal-oxide-semiconductor structures
Ludeke R, Cuberes MT, Cartier E
Journal of Vacuum Science & Technology B, 18(4), 2153, 2000 |
| 5 |
Energy-dependent conduction band mass of SiO2 determined by ballistic electron emission microscopy
Ludeke R, Schenk A
Journal of Vacuum Science & Technology B, 17(4), 1823, 1999 |
| 6 |
Localized degradation studies of ultrathin gate oxides
Wen HJ, Ludeke R
Journal of Vacuum Science & Technology A, 16(3), 1735, 1998 |
| 7 |
Current oscillations in thin metal-oxide-semiconductor structures observed by ballistic electron emission microscopy
Wen HJ, Ludeke R, Schenk A
Journal of Vacuum Science & Technology B, 16(4), 2296, 1998 |
| 8 |
Image Force Effects and the Dielectric Response of SiO2 in Electron-Transport Across Metal-Oxide-Semiconductor Structures
Wen HJ, Ludeke R, Newns DM, Lo SH
Journal of Vacuum Science & Technology A, 15(3), 784, 1997 |
| 9 |
Investigation of Existing Defects and Defect Generation in Device-Grade SiO2 by Ballistic-Electron-Emission Spectroscopy
Wen HJ, Ludeke R
Journal of Vacuum Science & Technology B, 15(4), 1080, 1997 |
| 10 |
Stressing and High-Field Transport Studies on Device-Grade SiO2 by Ballistic-Electron-Emission Spectroscopy
Ludeke R, Wen HJ, Cartier E
Journal of Vacuum Science & Technology B, 14(4), 2855, 1996 |
