검색결과 : 10건
| No. | Article |
|---|---|
| 1 |
MOVPE growth of Ga(PBi) on GaP and GaP on Si with Bi fractions up to 8% Nattermann L, Beyer A, Ludewig P, Hepp T, Sterzer E, Volz K Journal of Crystal Growth, 463, 151, 2017 |
| 2 |
Exploiting strain to enhance the Si incorporation in GaAs-based III/V semiconductors using MOVPE Nattermann L, Ludewig P, Sterzer E, Volz K Journal of Crystal Growth, 470, 15, 2017 |
| 3 |
Growth of high N containing GaNAs/GaP/BGaAsP multi quantum well structures on Si (001) substrates Ludewig P, Diederich M, Jandieri K, Stolz W Journal of Crystal Growth, 467, 61, 2017 |
| 4 |
Quantification of Bi distribution in MOVPE-grown Ga(AsBi) via HAADF STEM Knaub N, Beyer A, Wegele T, Ludewig P, Volz K Journal of Crystal Growth, 433, 89, 2016 |
| 5 |
MOVPE growth studies of Ga(NAsP)/(BGa)(AsP) multi quantum well heterostructures (MQWH) for the monolithic integration of laser structures on (001) Si-substrates Ludewig P, Reinhard S, Jandieri K, Wegele T, Beyer A, Tapfer L, Volz K, Stolz W Journal of Crystal Growth, 438, 63, 2016 |
| 6 |
MOVPE growth of Ga(AsBi)/GaAs using different metalorganic precursors Nattermann L, Ludewig P, Meckbach L, Ringler B, Keiper D, von Hanisch C, Stolz W, Volz K Journal of Crystal Growth, 426, 54, 2015 |
| 7 |
Growth and characterisation of Ga(NAsSi) alloy by metal-organic vapour phase epitaxy Bushell ZL, Ludewig P, Knaub N, Batool Z, Hild K, Stolz W, Sweeney SJ, Volz K Journal of Crystal Growth, 396, 79, 2014 |
| 8 |
Growth of Ga(AsBi) on GaAs by continuous flow MOVPE Ludewig P, Bushell ZL, Nattermann L, Knaub N, Stolz W, Volz K Journal of Crystal Growth, 396, 95, 2014 |
| 9 |
Investigation of the microstructure of metallic droplets on Ga(AsBi)/GaAs Sterzer E, Knaub N, Ludewig P, Straubinger R, Beyer A, Volz K Journal of Crystal Growth, 408, 71, 2014 |
| 10 |
MOVPE growth of Ga(AsBi)/GaAs multi quantum well structures Ludewig P, Knaub N, Stolz W, Volz K Journal of Crystal Growth, 370, 186, 2013 |