| 1 |
Study of charge trapping characteristics of SONOS with various trapping layers using gate-sensing and channel-sensing (GSCS) method
Liao JH, Lin HJ, Lue HT, Du PY, Hsieh JY, Yang LW, Yang T, Chen KC, Lu CY
Solid-State Electronics, 81, 51, 2013 |
| 2 |
A novel channel-program-erase technique with substrate transient hot carrier injection for SONOSNAND flash application
Hsu TH, King YC, Wu JY, Shih YH, Lue HT, Lai EK, Hsieh KY, Liu R, Lu CY
Solid-State Electronics, 51(11-12), 1523, 2007 |
| 3 |
Effect of fabrication process on the charge trapping behavior of SiON thin films
Wang SY, Lue HT, Lai EK, Yang LW, Gong J, Chen KC, Hsieh KY, Ku J, Lu CY
Solid-State Electronics, 50(7-8), 1171, 2006 |
| 4 |
Addenda to photoluminescence and electron paramagnetic resonance studies of defect centers in porous silicon
Lue HT, Tseng CY, Lue JT
Materials Chemistry and Physics, 73(2-3), 310, 2002 |
| 5 |
Photoluminescence and electron paramagnetic resonance studies of defect centers in porous silicon
Lue HT, Huang BY, Lue JT
Materials Chemistry and Physics, 65(1), 51, 2000 |
