검색결과 : 2건
| No. | Article |
|---|---|
| 1 |
Experimental demonstration of strained Si nanowire GAA n-TFETs and inverter operation with complementary TFET logic at low supply voltages Luong GV, Strangio S, Tiedemannn A, Lenk S, Trellenkamp S, Bourdelle KK, Zhao QT, Mantl S Solid-State Electronics, 115, 152, 2016 |
| 2 |
Demonstration of higher electron mobility in Si nanowire MOSFETs by increasing the strain beyond 1.3% Luong GV, Knoll L, Blaeser S, Suess MJ, Sigg H, Schafer A, Trellenkamp S, Bourdelle KK, Buca D, Zhao QT, Mantl S Solid-State Electronics, 108, 19, 2015 |