검색결과 : 36건
| No. | Article |
|---|---|
| 1 |
Assessment of intrinsic small signal parameters of submicron SiC MESFETs Riaz M, Ahmed MM, Rafique U, Ahmed UF Solid-State Electronics, 139, 80, 2018 |
| 2 |
SOI MESFETs on high-resistivity, trap-rich substrates Mehr P, Zhang X, Lepkowski W, Li CJ, Thornton TJ Solid-State Electronics, 142, 47, 2018 |
| 3 |
An improved model for current voltage characteristics of submicron SiC MESFETs Riaz M, Ahmed MM, Munir U Solid-State Electronics, 121, 54, 2016 |
| 4 |
On the design of GaN vertical MESFETs on commercial LED sapphire wafers Atalla MRM, Elahi AMN, Mo C, Jiang ZY, Liu J, Ashok S, Xu J Solid-State Electronics, 126, 23, 2016 |
| 5 |
Avalanche breakdown in SOI MESFETs Lepkowski W, Wilk SJ, Parsi A, Saraniti M, Ferry D, Thornton TJ Solid-State Electronics, 91, 78, 2014 |
| 6 |
A comprehensive four parameters I-V model for GaAs MESFET output characteristics Memon NM, Ahmed MM, Rehman F Solid-State Electronics, 51(3), 511, 2007 |
| 7 |
Conductance deep-level transient spectroscopy study of 1 mu m gate length 4H-SiC MESFETs Gassoumi M, Bluet JM, Dermoul I, Maaref H, Guillot G, Morvan E, Dua C, Brylinski C Solid-State Electronics, 50(2), 214, 2006 |
| 8 |
Large-signal modeling of SOI MESFETs Balijepalli A, Vijayaraghavan R, Ervin J, Yang J, Islam SK, Thornton TJ Solid-State Electronics, 50(6), 943, 2006 |
| 9 |
Characterization of SIC passivation using MOS capacitor ultraviolet-induced hysteresis Matocha K, Tucker J, Kaminsky E Materials Science Forum, 483, 589, 2005 |
| 10 |
Hole-like Defects in n-Channel 4H-SIC MESFETs Observed by Current Transient Spectroscopy Bluet JM, Gassoumi M, Dermoul I, Chekir F, Maaref H, Guillot G, Morvan E, Dua C, Brylinski C Materials Science Forum, 483, 865, 2005 |