| 1 |
Effects of a Short Physical Exercise Intervention on Patients with Multiple Sclerosis (MS)
Kerling A, Keweloh K, Tegtbur U, Kuck M, Grams L, Horstmann H, Windhagen A
International Journal of Molecular Sciences, 16(7), 15761, 2015 |
| 2 |
Multilevel metal/Pb(Zr0.52Ti0.48)O-3/TiOxNy/Si for next generation FeRAM technology node
Sharma DK, Khosla R, Sharma SK
Solid-State Electronics, 111, 42, 2015 |
| 3 |
Use of negative capacitance to simulate the electrical characteristics in double-gate ferroelectric field-effect transistors
Xiao YG, Tang MH, Xiong Y, Li JC, Cheng CP, Jiang B, Cai HQ, Tang ZH, Lv XS, Gu XC, Zhou YC
Current Applied Physics, 12(6), 1591, 2012 |
| 4 |
Factors for the polarization lifetime in metal-ferroelectric-insulator-semiconductor capacitors
Xiao YG, Xiong Y, Tang MH, Li JC, Gu XC, Cheng CP, Jiang B, Tang ZH, Lv XS, Cai HQ, He J
Solid-State Electronics, 73, 84, 2012 |
| 5 |
Electrical characteristics of Si MFIS-FETs using P(VDF-TrFE) thin films
Yoon JW, Yoon SM, Ishiwara H
Current Applied Physics, 11(3), S225, 2011 |
| 6 |
Electrical properties of metal-ferroelectric-insulator-semiconductor structure using BaxSr1-xTiO3 for ferroelectric-gate field effect transistor
Saif AA, Poopalan P
Solid-State Electronics, 62(1), 25, 2011 |
| 7 |
Al/Pb(Zr0.53Ti0.47)O-3/Polycrystalline Silicon/Insulator (Y2O3)/Si Field Effect Transistors for Nonvolatile Memory Applications
Chan PC, Chang IYK, Juan PC, Lee JYM
Electrochemical and Solid State Letters, 13(3), H73, 2010 |
| 8 |
The Ferroelectric and Charge Injection Effects of Metal-Ferroelectric (BiFe0.95Mn0.05O3)-Insulator (Bi2Ti2O7)-Silicon Capacitors
Yang CH, Hu GD, Wu WB, Wang JC, Wang X
Electrochemical and Solid State Letters, 13(5), G43, 2010 |
| 9 |
Low Voltage Operation of Nonvolatile Ferroelectric Capacitors Using Poly(vinylidene fluoride-trifluoroethylene) Copolymer and Thin Al2O3 Insulating Layer
Jung SW, Yoon SM, Kang SY, Choi KJ, Shin WC, Yu BG
Electrochemical and Solid State Letters, 12(9), H325, 2009 |
| 10 |
Electrical properties of metal-ferroelectric (PbZr0.53Ti0.47O3)-polysilicon-insulator (Y2O3)-silicon capacitors and field-effect transistors
Chan PC, Shih WC, Chang IYK, Lee JYM
Journal of Vacuum Science & Technology B, 27(3), 1026, 2009 |
