화학공학소재연구정보센터
검색결과 : 7건
No. Article
1 ALD Al2O3 passivation of L-g=100 nm metamorphic InAlAs/InGaAs HEMTs with Si-doped Schottky layers on GaAs substrates
Sun B, Chang HD, Wang SK, Niu JB, Liu HG
Solid-State Electronics, 138, 40, 2017
2 Cryogenic noise performance of InGaAs/InAlAs HEMTs grown on InP and GaAs substrate
Schleeh J, Rodilla H, Wadefalk N, Nilsson PA, Grahn J
Solid-State Electronics, 91, 74, 2014
3 Small-signal modeling approach to 0.1-mu m metamorphic HEMTs for W-band coplanar MMIC amplifier design
Moon SW, Jun BC, Jung SH, Park DS, Rhee JK, Kim SD
Current Applied Physics, 12(1), 81, 2012
4 A high isolation W-band MMIC drain type cascode single balanced mixer
Lee SJ, Baek TJ, Han M, Choi SG, Ko DS, Kim SD, Rhee JK
Current Applied Physics, 12(3), 773, 2012
5 Hydrogen sensing properties of a Pd/oxide/InAlAs metamorphic-based transistor
Tsai TH, Chen HI, Chen TY, Chen LY, Liu YJ, Huang CC, Hsu KS, Liu WC
International Journal of Hydrogen Energy, 35(8), 3903, 2010
6 W-band resistive mixer using metamorphic HEMT
Baek YH, Lee BH, Oh JH, Lim BO, Dan-An, Park JD, Kim SD, Rhee JK
Current Applied Physics, 6(5), 821, 2006
7 High power and high breakdown delta-doped In0.35Al0.65As/In0.35Ga0.65As metamorphic HEMT
Yu SJ, Hsu WC, Chen YJ, Wu CL
Solid-State Electronics, 50(2), 291, 2006