검색결과 : 7건
No. | Article |
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1 |
ALD Al2O3 passivation of L-g=100 nm metamorphic InAlAs/InGaAs HEMTs with Si-doped Schottky layers on GaAs substrates Sun B, Chang HD, Wang SK, Niu JB, Liu HG Solid-State Electronics, 138, 40, 2017 |
2 |
Cryogenic noise performance of InGaAs/InAlAs HEMTs grown on InP and GaAs substrate Schleeh J, Rodilla H, Wadefalk N, Nilsson PA, Grahn J Solid-State Electronics, 91, 74, 2014 |
3 |
Small-signal modeling approach to 0.1-mu m metamorphic HEMTs for W-band coplanar MMIC amplifier design Moon SW, Jun BC, Jung SH, Park DS, Rhee JK, Kim SD Current Applied Physics, 12(1), 81, 2012 |
4 |
A high isolation W-band MMIC drain type cascode single balanced mixer Lee SJ, Baek TJ, Han M, Choi SG, Ko DS, Kim SD, Rhee JK Current Applied Physics, 12(3), 773, 2012 |
5 |
Hydrogen sensing properties of a Pd/oxide/InAlAs metamorphic-based transistor Tsai TH, Chen HI, Chen TY, Chen LY, Liu YJ, Huang CC, Hsu KS, Liu WC International Journal of Hydrogen Energy, 35(8), 3903, 2010 |
6 |
W-band resistive mixer using metamorphic HEMT Baek YH, Lee BH, Oh JH, Lim BO, Dan-An, Park JD, Kim SD, Rhee JK Current Applied Physics, 6(5), 821, 2006 |
7 |
High power and high breakdown delta-doped In0.35Al0.65As/In0.35Ga0.65As metamorphic HEMT Yu SJ, Hsu WC, Chen YJ, Wu CL Solid-State Electronics, 50(2), 291, 2006 |