| 1 |
On conditions leading to crossing of I-V curve in metal(1)vertical bar mixed-ionic-electronic-conductor vertical bar metal(2) devices
Kalaev D, Riess I
Solid State Ionics, 241, 17, 2013 |
| 2 |
Capacitance and Interface Analysis of Transparent Analog Capacitor Using Indium Tin Oxide Electrodes and High-k Dielectrics
Won SJ, Huh MS, Park S, Suh S, Park TJ, Kim JH, Hwang CS, Kim HJ
Journal of the Electrochemical Society, 157(7), G170, 2010 |
| 3 |
Performance Improvement of Metal-Insulator-Metal Capacitors Using Postmetallization-Annealed Treatment on the Al2O3/TiO2/Al2O3 Film
Huang CC, Cheng CH, Lee K, Liou BH
Electrochemical and Solid State Letters, 12(4), H123, 2009 |
| 4 |
High-Performance Metal-Insulator-Metal Capacitor Using Quality Properties of High-kappa TiPrO Dielectric
Huang CC, Cheng CH, Lee KT, Liou BH
Journal of the Electrochemical Society, 156(4), G23, 2009 |
| 5 |
Dependence of the Metal Electrode and Improved Pulse Switching Speed of La0.7Ca0.3MnO3 as a Resistance Change Memory Device
Hasan M, Dong R, Choi H, Yoon J, Park JB, Seong DJ, Hwang H
Journal of the Electrochemical Society, 156(4), H239, 2009 |
