화학공학소재연구정보센터
검색결과 : 10건
No. Article
1 Low Hysteresis Dispersion La2O3 AlGaN/GaN MOS-HEMTs
Chiu HC, Lin CW, Chen CH, Yang CW, Lin CK, Fu JS, Chang LB, Lin RM, Hsueh KP
Journal of the Electrochemical Society, 157(2), H160, 2010
2 Effect of Postoxidation Annealing on High Temperature Grown SiO2/4H-SiC Interfaces
Moon JH, Yim JH, Seo HS, Lee DH, Song HK, Heo J, Kim HJ, Cheong KY, Bahng W, Kim NK
Journal of the Electrochemical Society, 157(2), H196, 2010
3 Effective Metal Work Function of Pt Gate Electrode in Ge Metal Oxide Semiconductor Device
Chandra SVJ, Jeong MR, Shim KH, Hong HB, Lee SH, Ahn KS, Choi CJ
Journal of the Electrochemical Society, 157(5), H546, 2010
4 Current Transport Mechanism in High-kappa Cerium Oxide Gate Dielectrics Grown on Germanium Substrates
Rahman MS, Evangelou EK, Androulidakis II, Dimoulas A
Electrochemical and Solid State Letters, 12(5), H165, 2009
5 pH Sensing of Ba0.7Sr0.3TiO3/SiO2 Film for Metal-Oxide-Semiconductor and Ion-Sensitive Field-Effect Transistor Devices
Chen CY, Chou JC, Chou HT
Journal of the Electrochemical Society, 156(6), G59, 2009
6 Effects of visible light illumination on the conductance of Al/AlOx single-electron transistors
George HC, Orlov AO, Joyce RA, Tang Y, Snider GL
Journal of Vacuum Science & Technology B, 27(6), 3158, 2009
7 Deposition of aluminum nitride thin film on Si(111) by KrF excimer laser and its characterizations
Shih MC, Liang CW, Chaing PJ
Applied Surface Science, 254(8), 2211, 2008
8 Preparation and electrical properties of Cr2O3 gate insulator embedded with Fe dot
Yokota T, Kuribayashi T, Murata S, Gomi M
Applied Surface Science, 254(23), 7959, 2008
9 On the unusual nature of a DLTS-detected defect in bulk n-type 6H-SiC
van Wyk E, Leitch AWR
Materials Science Forum, 433-4, 383, 2002
10 Characterisation of the BaTiO3/p-Si interface and applications
Evangelou EK, Konofaos N, Craven MR, Cranton WM, Thomas CB
Applied Surface Science, 166(1-4), 504, 2000