검색결과 : 13건
| No. | Article |
|---|---|
| 1 |
Improved performance of fully-recessed normally-off LPCVD SiN/GaN MISFET using N2O plasma pretreatment Li MJ, Wang JY, Wang HY, Cao QR, Liu JQ, Huang CY Solid-State Electronics, 156, 58, 2019 |
| 2 |
Normally-off dual gate AlGaN/GaN MISFET with selective area-recessed floating gate Ahn HK, Kim ZS, Bae SB, Kim HC, Kang DM, Kim SI, Lee JM, Min BG, Yoon HS, Lim JW, Kwon YH, Nam ES, Park HM, Kim HS, Lee JH Solid-State Electronics, 95, 42, 2014 |
| 3 |
Surface passivation of III-V semiconductors for future CMOS devices-Past research, present status and key issues for future Hasegawa H, Akazawa M, Domanowska A, Adamowicz B Applied Surface Science, 256(19), 5698, 2010 |
| 4 |
Detection of CO2 in solution with a Pt-NiO solid-state sensor Yue Z, Niu WC, Zhang W, Liu GH, Parak WJ Journal of Colloid and Interface Science, 348(1), 227, 2010 |
| 5 |
Effects of Fluorine Incorporation on the Electrical Properties of Atomic-Layer-Deposited Al2O3 Gate Dielectric on InP Substrate Chen YT, Zhao H, Yum JH, Wang YZ, Xue F, Zhou F, Lee JC Journal of the Electrochemical Society, 157(3), G71, 2010 |
| 6 |
Improved Electrical Performance and Thermal Stability of HfO2/Al2O3 Bilayer over HfO2 Gate Dielectric AlGaN/GaN MIS-HFETs Tian F, Chor EF Journal of the Electrochemical Society, 157(5), H557, 2010 |
| 7 |
Effect of iodotrifluoromethane plasma for reducing ultraviolet light irradiation damage in dielectric film etching processes Ichihashi Y, Ishikawa Y, Shimizu R, Samukawa S Journal of Vacuum Science & Technology B, 28(3), 577, 2010 |
| 8 |
Electrical characterization of high-k gate dielectrics on Ge with HfGeN and GeO2 interlayers Hirayama K, Kira W, Yoshino K, Yang HG, Wang D, Nakashima H Thin Solid Films, 518(9), 2505, 2010 |
| 9 |
Ferroelectric thin film field-effect transistors based on ZnO/BaTiO3 heterostructures Brandt M, Frenzel H, Hochmuth H, Lorenz M, Grundmann M, Schubert J Journal of Vacuum Science & Technology B, 27(3), 1789, 2009 |
| 10 |
Surface state density distribution at vacuum-annealed InP(100) surface as derived from the rigorous analysis of photoluminescence efficiency Tomkiewicz P, Adamowicz B, Miczek M, Hasegawa H, Szuber J Applied Surface Science, 254(24), 8046, 2008 |