화학공학소재연구정보센터
검색결과 : 2건
No. Article
1 Temperature-dependent characteristics of AlGaN/GaN FinFETs with sidewall MOS channel
Im KS, Kang HS, Kim DK, Vodapally S, Park Y, Lee JH, Kim YT, Cristoloveanu S, Lee JH
Solid-State Electronics, 120, 47, 2016
2 Gate dielectric engineering of quarter sub micron AlGaN/GaN MISHFET: A new device architecture for improved transconductance and high cut-off frequency
Aggarwal R, Agrawal A, Gupta M, Gupta RS
Solid-State Electronics, 52(10), 1610, 2008