화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 3-D multilayer monolithic integration of vertical-oriented double-heterojunction GaAs based pHEMT and thermal influence on device parameters
Alim MA, Rezazadeh AA
Solid-State Electronics, 132, 24, 2017
2 True planar InAs/AlSb HEMTs with ion-implantation technique for low-power cryogenic applications
Moschetti G, Abbasi M, Nilsson PA, Hallen A, Desplanque L, Wallart X, Grahn J
Solid-State Electronics, 79, 268, 2013
3 Novel electronic packages made of highly loaded SiC particle aluminium based composites for space applications
Coleto J, Maudes J, Goni J, Marcos J, Calvin J, Costas F
Materials Science Forum, 426-4, 2151, 2003
4 Magnetron ion etching of through-wafer via holes for GaAs monolithic microwave integrated circuits using SiCl4
Mitra A, Nordquist CD, Jackson TN, Mayer TS
Journal of Vacuum Science & Technology B, 16(5), 2695, 1998