검색결과 : 4건
No. | Article |
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1 |
3-D multilayer monolithic integration of vertical-oriented double-heterojunction GaAs based pHEMT and thermal influence on device parameters Alim MA, Rezazadeh AA Solid-State Electronics, 132, 24, 2017 |
2 |
True planar InAs/AlSb HEMTs with ion-implantation technique for low-power cryogenic applications Moschetti G, Abbasi M, Nilsson PA, Hallen A, Desplanque L, Wallart X, Grahn J Solid-State Electronics, 79, 268, 2013 |
3 |
Novel electronic packages made of highly loaded SiC particle aluminium based composites for space applications Coleto J, Maudes J, Goni J, Marcos J, Calvin J, Costas F Materials Science Forum, 426-4, 2151, 2003 |
4 |
Magnetron ion etching of through-wafer via holes for GaAs monolithic microwave integrated circuits using SiCl4 Mitra A, Nordquist CD, Jackson TN, Mayer TS Journal of Vacuum Science & Technology B, 16(5), 2695, 1998 |