화학공학소재연구정보센터
검색결과 : 7건
No. Article
1 Effect of capping procedure on quantum dot morphology: Implications on optical properties and efficiency of InAs/GaAs quantum dot solar cells
Weiner EC, Jakomin R, Micha DN, Xie H, Su PY, Pinto LD, Pires MP, Ponce FA, Souza PL
Solar Energy Materials and Solar Cells, 178, 240, 2018
2 Recent progress in MOCVD growth for thermoelectrically cooled HgCdTe medium wavelength infrared photodetectors
Gawron W, Martyniuk P, Keblowski A, Kolwas K, Stepien D, Piotrowski J, Madejczyk P, Pedzinska M, Rogalski A
Solid-State Electronics, 118, 61, 2016
3 Electroluminescence enhancement of (11(2)over-bar2) semipolar GaN light-emitting diodes grown on miscut m-plane sapphire substrates
Bae SY, Lee DS, Kong BH, Cho HK, Kaeding JF, Nakamura S, DenBaars SP, Speck JS
Current Applied Physics, 11(3), 954, 2011
4 MOCVD of InGaAsP, InGaAs and InGaP over InP and GaAs substrates: distribution of composition and growth rate in a horizontal reactor
Feron O, Sugiyama M, Asawamethapant W, Futakuchi N, Feurprier Y, Nakano Y, Shimogaki Y
Applied Surface Science, 159, 318, 2000
5 Formation of interfaces in InGaP/GaAs/InGaP quantum wells
Kudela R, Kucera M, Olejnikova B, Elias P, Hasenohrl S, Novak J
Journal of Crystal Growth, 212(1-2), 21, 2000
6 Characterization of ZnSe/Ge material growth using the atomic force microscope
Abdel-Motaleb IM, Pal S, Desai P
Journal of Crystal Growth, 217(4), 366, 2000
7 Study of the Phosphine Plasma Decomposition and Its Formation by Ablation of Red Phosphorus in Hydrogen Plasma
Bruno G, Losurdo M, Capezzuto P
Journal of Vacuum Science & Technology A, 13(2), 349, 1995