검색결과 : 7건
No. | Article |
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1 |
Effect of capping procedure on quantum dot morphology: Implications on optical properties and efficiency of InAs/GaAs quantum dot solar cells Weiner EC, Jakomin R, Micha DN, Xie H, Su PY, Pinto LD, Pires MP, Ponce FA, Souza PL Solar Energy Materials and Solar Cells, 178, 240, 2018 |
2 |
Recent progress in MOCVD growth for thermoelectrically cooled HgCdTe medium wavelength infrared photodetectors Gawron W, Martyniuk P, Keblowski A, Kolwas K, Stepien D, Piotrowski J, Madejczyk P, Pedzinska M, Rogalski A Solid-State Electronics, 118, 61, 2016 |
3 |
Electroluminescence enhancement of (11(2)over-bar2) semipolar GaN light-emitting diodes grown on miscut m-plane sapphire substrates Bae SY, Lee DS, Kong BH, Cho HK, Kaeding JF, Nakamura S, DenBaars SP, Speck JS Current Applied Physics, 11(3), 954, 2011 |
4 |
MOCVD of InGaAsP, InGaAs and InGaP over InP and GaAs substrates: distribution of composition and growth rate in a horizontal reactor Feron O, Sugiyama M, Asawamethapant W, Futakuchi N, Feurprier Y, Nakano Y, Shimogaki Y Applied Surface Science, 159, 318, 2000 |
5 |
Formation of interfaces in InGaP/GaAs/InGaP quantum wells Kudela R, Kucera M, Olejnikova B, Elias P, Hasenohrl S, Novak J Journal of Crystal Growth, 212(1-2), 21, 2000 |
6 |
Characterization of ZnSe/Ge material growth using the atomic force microscope Abdel-Motaleb IM, Pal S, Desai P Journal of Crystal Growth, 217(4), 366, 2000 |
7 |
Study of the Phosphine Plasma Decomposition and Its Formation by Ablation of Red Phosphorus in Hydrogen Plasma Bruno G, Losurdo M, Capezzuto P Journal of Vacuum Science & Technology A, 13(2), 349, 1995 |