| 1 |
A precise physics-based compact model for 2-DEG charge density in GaAs HEMTs applicable in all regions of device operation
Khandelwal S, Goyal N, Fjeldly TA
Solid-State Electronics, 79, 22, 2013 |
| 2 |
A charge-based capacitance model for AlGaAs/GaAs HEMTs
Khandelwal S, Yigletu FM, Iniguez B, Fjeldly TA
Solid-State Electronics, 82, 38, 2013 |
| 3 |
A physics based compact model of I-V and C-V characteristics in AlGaN/GaN HEMT devices
Khandelwal S, Fjeldly TA
Solid-State Electronics, 76, 60, 2012 |
| 4 |
Gallium nitride: the promise of high RF power and low microwave noise performance in S and I band
Oxley CH
Solid-State Electronics, 48(7), 1197, 2004 |
| 5 |
Influence of the semiconductor doping level on the carrier surface density in an AlGaN/GaN MODFET channel
Sasic R, Cevizovic D, Ramovic R
Materials Science Forum, 413, 39, 2003 |
| 6 |
GaN-based modulation doped FETs and UV detectors
Morkoc H, Di Carlo A, Cingolani R
Solid-State Electronics, 46(2), 157, 2002 |
| 7 |
Growth of high-performance GaN modulation-doped field-effect transistors by ammonia-molecular-beam epitaxy
Tang H, Webb JB, Bardwell JA, MacElwee T
Journal of Vacuum Science & Technology A, 18(2), 652, 2000 |
| 8 |
Real time monitoring and control of wet etching of GaAs/Al0.3Ga0.7As using real time spectroscopic ellipsometry
Cho SJ, Snyder PG
Journal of Vacuum Science & Technology B, 17(5), 2045, 1999 |
| 9 |
Growth of strained GaInP on InP by metalorganic molecular beam epitaxy for heterostructure field effect transistor application
Cohen GM, Zisman P, Bahir G, Ritter D
Journal of Vacuum Science & Technology B, 16(5), 2639, 1998 |
| 10 |
Gate recessing optimization of GaAs/Al0.22Ga0.78As heterojunction field effect transistor using citric acid hydrogen peroxide ammonium hydroxide for power applications
Hue X, Boudart B, Crosnier Y
Journal of Vacuum Science & Technology B, 16(5), 2675, 1998 |
