검색결과 : 31건
| No. | Article |
|---|---|
| 1 |
Effect of the cluster size in modeling the H-2 desorption and dissociative adsorption on Si(001) Penev E, Kratzer P, Scheffler M Journal of Chemical Physics, 110(8), 3986, 1999 |
| 2 |
Heterogeneous recombination of atomic bromine and fluorine Kota GP, Coburn JW, Graves DB Journal of Vacuum Science & Technology A, 17(1), 282, 1999 |
| 3 |
Abstraction of chemisorbed bromine from the Si(111) surface by incident hydrogen atoms McEllistrem M, Buehler EJ, Itchkawitz BS, Boland JJ Journal of Chemical Physics, 108(17), 7384, 1998 |
| 4 |
The kinetics of the low-pressure chemical vapor deposition of polycrystalline silicon from silane Weerts WLM, de Croon MHJM, Marin GB Journal of the Electrochemical Society, 145(4), 1318, 1998 |
| 5 |
The recombination of chlorine atoms at surfaces Kota GP, Coburn JW, Graves DB Journal of Vacuum Science & Technology A, 16(1), 270, 1998 |
| 6 |
Desorption rate of surface hydrogen in SiGe gas-source molecular beam epitaxy using Si2H6 and GeH4 Hirose F, Sakamoto H Journal of Vacuum Science & Technology A, 16(5), 2974, 1998 |
| 7 |
P-2 desorption from phosphine decomposition on Si(100) surfaces Jacobson ML, Chiu MC, Crowell JE Langmuir, 14(6), 1428, 1998 |
| 8 |
Reaction Dynamics of Atomic-Hydrogen with the Hydrogenated Si(001) (2X1) Surface Kratzer P Journal of Chemical Physics, 106(16), 6752, 1997 |
| 9 |
Hydrogen Desorption from Ion-Roughened Si(100) Hess G, Russell M, Gong B, Parkinson P, Ekerdt JG Journal of Vacuum Science & Technology A, 15(3), 1129, 1997 |
| 10 |
Migration-Assisted Si Subatomic-Layer Epitaxy from Si2H6 Suda Y Journal of Vacuum Science & Technology A, 15(5), 2463, 1997 |