화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 Effects of dislocations on reliability of thermal oxides grown on n-type 4H-SiC wafer
Senzaki J, Kojima K, Kato T, Shimozato A, Fukuda K
Materials Science Forum, 483, 661, 2005
2 A long-term reliability of thermal oxides grown on n-type 4H-SiC wafer
Senzaki J, Goto M, Kojima K, Yamabe K, Fukuda K
Materials Science Forum, 457-460, 1269, 2004
3 Reliability and degradation of metal-oxide-semiconductor capacitors on 4H-and 6H-silicon carbide
Treu M, Schorner R, Friedrichs P, Rupp R, Wiedenhofer A, Stephani D, Ryssel H
Materials Science Forum, 338-3, 1089, 2000