| 1 |
Electrical and dielectric properties of Al/HfO2/p-Si MOS device at high temperatures
Bengi S, Bulbul MM
Current Applied Physics, 13(8), 1819, 2013 |
| 2 |
Surface passivation technology for III-V semiconductor nanoelectronics
Hasegawa H, Akazawa M
Applied Surface Science, 255(3), 628, 2008 |
| 3 |
Unified tunnelling-diffusion theory for Schottky and very thin MOS structures
Racko J, Valent P, Benko P, Donoval D, Harmatha L, Pintes P, Breza J
Solid-State Electronics, 52(11), 1755, 2008 |
| 4 |
Distributions of barrier heights, difference of effective contact potential, and local values of flat-band voltage in Al-SiO2-Si and poly-Si-SiO2-Si structures
Przewlocki HM, Kudia A, Piskorski K, Brzezinska D
Thin Solid Films, 516(12), 4184, 2008 |
| 5 |
Studies of Hf(Si,O) dielectrics for metal-oxide-semiconductor applications
Chang K, Shanmugasundaram K, Shallenberger J, Ruzyllo J
Thin Solid Films, 515(7-8), 3802, 2007 |
| 6 |
Electrical properties of MOS structures on nitrogen-doped Czochralski-grown silicon: A positron annihilation study
Slugen V, Harmatha L, Tapaina M, Ballo P, Pisecny P, Sik J, Kogel G, Krsjak V
Applied Surface Science, 252(9), 3201, 2006 |
| 7 |
DC characterization of 4H-SiC depletion mode MOS field effect transistor
Zhao P, Rusli, Zhu CL, Wang H, Tin CC
Solid-State Electronics, 50(3), 384, 2006 |
| 8 |
Study of temperature dependence of positive charge generation in thin dielectric film of MOS structure under high-fields
Bondarenko GG, Andreev VV, Drach VE, Loskutov SA, Stolyarov MA
Thin Solid Films, 515(2), 670, 2006 |
| 9 |
A comparison of quantum correction models for nanoscale MOS structures under inversion conditions
Li Y
Materials Science Forum, 480, 603, 2005 |
| 10 |
Interface trap properties of thermally oxidized n-type 4H-SiC and 6H-SiC
Rudenko TE, Osiyuk IN, Tyagulski IP, Olafsson HO, Sveinbjornsson EO
Solid-State Electronics, 49(4), 545, 2005 |
