| 1 |
Acoustic spectroscopy and electrical characterization of Si/NAOS-SiO2/HfO2 structures
Bury P, Matsumoto T, Bellan I, Janek M, Kobayashi H
Applied Surface Science, 269, 50, 2013 |
| 2 |
Effects of oxide layers and metals on photoelectric and optical properties of Schottky barrier photodetector
Mohamad WF, Abou Hajar A, Saleh AN
Renewable Energy, 31(10), 1493, 2006 |
| 3 |
Characterization of 4H-SiC MOS structures with Al2O3 as gate dielectric
Paskaleva A, Ciechonski RR, Syvajarvi M, Atanassova E, Yakimova R
Materials Science Forum, 483, 709, 2005 |
| 4 |
Properties of SiO2 thin films prepared by anodic oxidation under UV illumination and rapid photothermal processing
Shishiyanu ST, Lupan OI, Shishiyanu TS, Sontea VP, Railean SK
Electrochimica Acta, 49(25), 4433, 2004 |
| 5 |
Accurate modeling of gate capacitance in deep submicron MOSFETs with high-K gate-dielectrics
Hakim MMA, Haque A
Solid-State Electronics, 48(7), 1095, 2004 |
| 6 |
Model for defect generation at the (100)Si/SiO2 interface during electron injection in MOS structures
Houssa M, Autran JL, Heyns MM, Stesmans A
Applied Surface Science, 212, 749, 2003 |
| 7 |
Gate/drain bias-induced degradation effects in TFTs fabricated in unhydrogenated SPC polycrystalline silicon films
Kouvatsos DN, Davazoglou D
Thin Solid Films, 426(1-2), 250, 2003 |
| 8 |
Dopant diffusion during rapid thermal oxidation
Stadler A, Sulima T, Schulze J, Fink C, Kottantharayil A, Hansch W, Baumgartner H, Eisele I, Lerch W
Solid-State Electronics, 44(5), 831, 2000 |
| 9 |
Quantitative Study of Charge-to-Breakdown of Thin Gate Oxide for a P(+)-Poly-Si Metal-Oxide-Semiconductor Capacitor
Wang LS, Lin MS
Journal of the Electrochemical Society, 144(2), 698, 1997 |
| 10 |
Room-Temperature Reduction of Merie-Like Plasma-Induced Interface States
Atanassova E
Thin Solid Films, 301(1-2), 1, 1997 |
