검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
Compact model for long-channel cylindrical surrounding-gate MOSFETs valid from low to high doping concentrations Cheralathan M, Cerdeira A, Iniguez B Solid-State Electronics, 55(1), 13, 2011 |
| 2 |
Compact charge and capacitance modeling of undoped ultra-thin body (UTB) SOI MOSFETs Moldovan O, Chaves FA, Jimenez D, Iniguez B Solid-State Electronics, 52(12), 1867, 2008 |
| 3 |
Exact analytical solution of channel surface potential as an explicit function of gate voltage in undoped-body MOSFETs using the Lambert W function and a threshold voltage definition therefrom Ortiz-Conde A, Sanchez FJG, Guzman M Solid-State Electronics, 47(11), 2067, 2003 |