화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 An efficient channel segmentation approach for a large-signal NQS MOSFET model
Bucher M, Bazigos A
Solid-State Electronics, 52(2), 275, 2008
2 A compact SOI MOS transistor model for distortion analysis
Zhang GY, Liao HL, Huang R, Chan MS, Zhang X, Wang YY
Solid-State Electronics, 47(1), 143, 2003
3 On the use of appropriate boundary conditions to calculate the normalized wave functions in the inversion layers of MOSFETs with ultra-thin gate oxides
Haque A, Rahman A, Chowdhury IB
Solid-State Electronics, 44(10), 1833, 2000