| 1 |
Generic complex-variable potential equation for the undoped asymmetric independent double-gate MOSFET
Ortiz-Conde A, Garcia-Sanchez FJ
Solid-State Electronics, 57(1), 43, 2011 |
| 2 |
Wave function penetration effects on ballistic drain current in double gate MOSFETs fabricated on (100) and (110) silicon surfaces
Ashraf MK, Khan AI, Haque A
Solid-State Electronics, 53(3), 271, 2009 |
| 3 |
Small-signal performance and modeling of sub-50 nm nMOSFETs with f(T) above 460-GHz
Dimitrov V, Heng JB, Timp K, Dimauro O, Chan R, Hafez M, Feng J, Sorsch T, Mansfield W, Miner J, Kornblit A, Klemens F, Bower J, Cirelli R, Ferry EJ, Taylor A, Feng M, Timp G
Solid-State Electronics, 52(6), 899, 2008 |
| 4 |
DC and AC MOS transistor modelling in presence of high gate leakage and experimental validation
Gilibert F, Rideau D, Bernardini S, Scheer P, Minondo M, Roy D, Gouget G, Juge A
Solid-State Electronics, 48(4), 597, 2004 |
| 5 |
New approach for the gate current source-drain partition modeling in advanced MOSFETs
Romanjek K, Lime F, Ghibaudo G, Leroux C
Solid-State Electronics, 47(10), 1657, 2003 |
| 6 |
Threshold voltage model for deep-submicron fully depleted SOICMOS transistors including the effect of source/drain fringing fields into the buried oxide
van Meer H, De Meyer K
Solid-State Electronics, 45(4), 593, 2001 |
| 7 |
A study into the broadening of the quantized inversion layer states in deep submicron MOSFETs
Rahman A, Haque A
Solid-State Electronics, 45(5), 755, 2001 |
