검색결과 : 280건
| No. | Article |
|---|---|
| 1 |
TEOS-based low-pressure chemical vapor deposition for gate oxides in 4H-SiC MOSFETs using nitric oxide post-deposition annealing Moon JH, Kang IH, Kim HW, Seok O, Bahng W, Ha MW Current Applied Physics, 20(12), 1386, 2020 |
| 2 |
On the C-V characteristics of nanoscale strained gate-all-around Si/SiGe MOSFETs Kumari A, Kumar S, Sharma TK, Das MK Solid-State Electronics, 154, 36, 2019 |
| 3 |
Ferroelectric properties of SOS and SOI pseudo-MOSFETs with HfO2 interlayers Popov VP, Antonov VA, Ilnitsky MA, Tyschenko IE, Vdovin VI, Miakonkikh AV, Rudenko KV Solid-State Electronics, 159, 63, 2019 |
| 4 |
28 nm FDSOI analog and RF Figures of Merit at N-2 cryogenic temperatures Esfeh BK, Planes N, Haond M, Raskin JP, Flandre D, Kilchytska V Solid-State Electronics, 159, 77, 2019 |
| 5 |
Effects of mole fraction variations and scaling on total variability in InGaAs MOSFETs Zagni N, Puglisi FM, Pavan P, Verzellesi G Solid-State Electronics, 159, 135, 2019 |
| 6 |
Static and low frequency noise characterization of ultra-thin body InAs MOSFETs Karatsori TA, Pastorek M, Theodorou CG, Fadjie A, Wichmann N, Desplanque L, Wallart X, Bollaert S, Dimitriadis CA, Ghibaudo G Solid-State Electronics, 143, 56, 2018 |
| 7 |
Comprehensive comparison between silicon carbide MOSFETs and silicon IGBTs based traction systems for electric vehicles Ding XF, Du M, Zhou T, Guo H, Zhang CM Applied Energy, 194, 626, 2017 |
| 8 |
Design and implementation of a loss optimization control for electric vehicle in-wheel permanent-magnet synchronous motor direct drive system Guo QB, Zhang CM, Li LY, Gerada D, Zhang JP, Wang MY Applied Energy, 204, 1317, 2017 |
| 9 |
RF SOI CMOS technology on 1st and 2nd generation trap-rich high resistivity SOI wafers Esfeh BK, Makovejev S, Basso D, Desbonnets E, Kilchytska V, Flandre D, Raskin JP Solid-State Electronics, 128, 121, 2017 |
| 10 |
A gate-width scalable 90-nm MOSFET nonlinear model including DC/RF dispersion effects valid up to 50 GHz Yu PP, Sun L, Tian XN, Cheng JL, Gao JJ Solid-State Electronics, 135, 53, 2017 |