검색결과 : 11건
| No. | Article |
|---|---|
| 1 |
Magnetic antiskyrmions above room temperature in tetragonal Heusler materials Nayak AK, Kumar V, Ma TP, Werner P, Pippel E, Sahoo R, Damay F, Rossler UK, Felser C, Parkin SSP Nature, 548(7669), 561, 2017 |
| 2 |
USP7 small-molecule inhibitors interfere with ubiquitin binding Kategaya L, Di Lello P, Rouge L, Pastor R, Clark KR, Drummond J, Kleinheinz T, Lin E, Upton JP, Prakash S, Heideker J, McCleland M, Ritorto MS, Alessi DR, Trost M, Bainbridge TW, Kwok MCM, Ma TP, Stiffler Z, Brasher B, Tang YY, Jaishankar P, Hearn BR, Renslo AR, Arkin MR, Cohen F, Yu KB, Peale F, Gnad F, Chang MT, Klijn C, Blackwood E, Martin SE, Forrest WF, Ernst JA, Ndubaku C, Wang XJ, Beresini MH, Tsui V, Schwerdtfeger C, Blake RA, Murray J, Maurer T, Wertz IE Nature, 550(7677), 534, 2017 |
| 3 |
Decomposition of Benzene Using a Pulse-Modulated DBD Plasma Ma TP, Jiang HD, Liu JQ, Zhong FC Plasma Chemistry and Plasma Processing, 36(6), 1533, 2016 |
| 4 |
Ferroelectric Field Effect Transistors for Memory Applications Hoffman J, Pan XA, Reiner JW, Walker FJ, Han JP, Ahn CH, Ma TP Advanced Materials, 22(26-27), 2957, 2010 |
| 5 |
Inelastic Electron Tunneling Spectroscopy Study of Thin Gate Dielectrics Reiner JW, Cui S, Liu ZG, Wang MM, Ahn CH, Ma TP Advanced Materials, 22(26-27), 2962, 2010 |
| 6 |
Electrical characterization of high-k gate dielectrics on semiconductors Ma TP Applied Surface Science, 255(3), 672, 2008 |
| 7 |
Molecular beam epitaxy growth of InAs and In0.8Ga0.2As channel materials on GaAs substrate for metal oxide semiconductor field effect transistor applications Li N, Harmon ES, Salzman DB, Zakharov DN, Jeon JH, Stach E, Woodall JM, Wang XW, Ma TP, Walker F Journal of Vacuum Science & Technology B, 26(3), 1187, 2008 |
| 8 |
Improving 4H-SiC/SiO2 interface properties by depositing ultra-thin Si nitride layer prior to formation of SiO2 and annealing Wang XW, Bu HM, Laube BL, Caragianis-Broadbridge C, Ma TP Materials Science Forum, 389-3, 993, 2002 |
| 9 |
Transmission electron microscope investigation of SrBi2Ta2O9 memory capacitors on Si with silicon dioxide and silicon nitride as buffers Ils A, Cantoni M, Sallese JM, Fazan P, Han JP, Guo X, Ma TP Journal of Vacuum Science & Technology B, 18(4), 1915, 2000 |
| 10 |
Comparative study of self-aligned and nonself-aligned SiGe p-metal-oxide-semiconductor modulation-doped field effect transistors with nanometer gate lengths Lu W, Koester SJ, Wang XW, Chu JO, Ma TP, Adesida I Journal of Vacuum Science & Technology B, 18(6), 3488, 2000 |