검색결과 : 7건
| No. | Article |
|---|---|
| 1 |
CBr4-based in-situ etching of GaAs, assisted with TMAl and TMGa Della Casa P, Maassdorf A, Zeimer U, Weyers M Journal of Crystal Growth, 434, 116, 2016 |
| 2 |
AlAsP-based strain-balancing in MOVPE-grown distributed Bragg reflectors Maassdorf A, Weyers M Journal of Crystal Growth, 414, 10, 2015 |
| 3 |
MOVPE-grown AlxGa1-xAsyP1-y strain compensating layers on GaAs Maassdorf A, Zeimer U, Weyers M Journal of Crystal Growth, 370, 150, 2013 |
| 4 |
In-situ etching of patterned GaAs/InGaP surfaces for highly efficient 975 nm DFB-BA diode lasers Maassdorf A, Schultz CM, Brox O, Wenzel H, Crump P, Bugge F, Mogilatenko A, Erbert G, Weyers M, Trankle G Journal of Crystal Growth, 370, 226, 2013 |
| 5 |
Growth and characterization of heavily selenium doped GaAs using MOVPE Maassdorf A, Hoffmann M, Weyers M Journal of Crystal Growth, 315(1), 57, 2011 |
| 6 |
In-situ etching of GaAs/AlxGa1-xAs by CBr4 Maassdorf A, Weyers M Journal of Crystal Growth, 310(23), 4754, 2008 |
| 7 |
Carbon doping for the GaAs base layer of Heterojunction Bipolar Transistors in a production scale MOVPE reactor Brunner F, Bergunde T, Richter E, Kurpas P, Achouche M, Maassdorf A, Wurfl J, Weyers M Journal of Crystal Growth, 221, 53, 2000 |