검색결과 : 7건
| No. | Article |
|---|---|
| 1 |
Spontaneous polarization of 4H SiC determined from optical emissions of 4H/3C/4H-SiC quantum wells Bai S, Devaty RP, Choyke WJ, Kaiser U, Wagner G, MacMillan MF Materials Science Forum, 457-460, 573, 2004 |
| 2 |
Photoluminescence study of C-H and C-D centers in 4H SiC Bai S, Yan F, Devaty RP, Choyke WJ, Grotzschel R, Wagner G, MacMillan MF Materials Science Forum, 457-460, 589, 2004 |
| 3 |
Influence of PECVD of SiO2 passivation layers on 4H-SiC Schottky rectifiers Nigam S, Kim J, Ren F, Chung G, MacMillan MF, Pearton SJ Electrochemical and Solid State Letters, 6(1), G4, 2003 |
| 4 |
Simulation and experimental characteristics of 4H-SiC Schottky power rectifiers Nigam S, Kim J, Luo B, Ren F, Chung GY, MacMillan MF, Williams JR, Pearton SJ Journal of the Electrochemical Society, 150(1), G1, 2003 |
| 5 |
Effects of Ar inductively coupled plasma exposure on 4H-SiC Schottky rectifiers Ip K, Nigam S, Lee KP, Baik KH, Chung GY, MacMillan MF, Ren F, Pearton SJ Journal of Vacuum Science & Technology B, 20(6), 2299, 2002 |
| 6 |
Photoluminescence and thermally stimulated luminescence in semi-insulating SiC Suleimanov YM, Lulu S, Tarasov I, Ostapenko S, Heydemann VD, Roth MD, Kordina O, MacMillan MF Materials Science Forum, 433-4, 59, 2002 |
| 7 |
Multi-wafer VPE growth and characterization of SiC epitaxial layers Nordby HD, O'Loughlin MJ, MacMillan MF, Burk AA, Oliver JD Materials Science Forum, 338-3, 173, 2000 |