검색결과 : 2건
| No. | Article |
|---|---|
| 1 |
Dopant diffusion modeling for heteroepitaxial SiGe/Si devices Chakravarthi S, Chidambaram PR, Machala CF, Mansoori M Journal of Vacuum Science & Technology B, 24(2), 608, 2006 |
| 2 |
High-resolution two-dimensional dopant characterization using secondary ion mass spectrometry Ukraintsev VA, Chen PJ, Gray JT, Machala CF, Magel LK, Chang MC Journal of Vacuum Science & Technology B, 18(1), 580, 2000 |