검색결과 : 13건
| No. | Article |
|---|---|
| 1 |
Low damage fully self-aligned replacement gate process for fabricating deep sub-100 nm gate length GaAs metal-oxide-semiconductor field-effect transistors Li X, Bentley S, McLelland H, Holland MC, Zhou H, Thoms S, Macintyre DS, Thayne IG Journal of Vacuum Science & Technology B, 28(6), C6L1, 2010 |
| 2 |
Linewidth metrology for sub-10-nm lithography Thoms S, Macintyre DS Journal of Vacuum Science & Technology B, 28(6), C6H6, 2010 |
| 3 |
Resist residues and transistor gate fabrication Macintyre DS, Ignatova O, Thoms S, Thayne IG Journal of Vacuum Science & Technology B, 27(6), 2597, 2009 |
| 4 |
Fully self-aligned process for fabricating 100 nm gate length enhancement mode GaAs metal-oxide-semiconductor field-effect transistors Li X, Hill RJW, Longo P, Holland MC, Zhou HP, Thoms S, Macintyre DS, Thayne IG Journal of Vacuum Science & Technology B, 27(6), 3153, 2009 |
| 5 |
Optical characterization of a hydrogen silsesquioxane lithography process Samarelli A, Macintyre DS, Strain MJ, De La Rue RM, Sorel M, Thoms S Journal of Vacuum Science & Technology B, 26(6), 2290, 2008 |
| 6 |
Enhanced stitching for the fabrication of photonic structures by electron beam lithography Gnan M, Macintyre DS, Sorel M, De la Rue RM, Thoms S Journal of Vacuum Science & Technology B, 25(6), 2034, 2007 |
| 7 |
Low damage sputter deposition of tungsten for decanano compound semiconductor transistors Cao X, Macintyre DS, Thoms S, Li X, Zhou H, Wilkinson CDW, Holland M, Donaldson L, McEwan F, McLellend H, Thayne I Journal of Vacuum Science & Technology B, 23(6), 3138, 2005 |
| 8 |
Direct imprint of sub-10 nm features into metal using diamond and SiC stamps Lister KA, Thoms S, Macintyre DS, Wilkinson CDW, Weaver JMR, Casey BG Journal of Vacuum Science & Technology B, 22(6), 3257, 2004 |
| 9 |
Imprint lithography issues in the fabrication of high electron mobility transistors Thoms S, Macintyre DS, Moran D, Thayne I Journal of Vacuum Science & Technology B, 22(6), 3271, 2004 |
| 10 |
Nanoimprint lithography process optimization for the fabrication of high electron mobility transistors Macintyre DS, Chen Y, Gourlay D, Boyd E, Moran D, Cao X, Elgaid K, Stanley CR, Thayne I, Thoms S Journal of Vacuum Science & Technology B, 21(6), 2783, 2003 |