화학공학소재연구정보센터
검색결과 : 42건
No. Article
1 Direct Bonding of Silicon to Platinum
Dargent L, Bogumilowicz Y, Renault O, Ghyselen B, Madar R, Clavelier L
Journal of the Electrochemical Society, 158(3), H255, 2011
2 Progress and limits of the numerical simulation of SiC bulk and epitaxy growth processes
Pons M, Blanquet E, Dedulle JM, Ucar M, Wellmann P, Danielsson O, Ferret P, Di Cioccio L, Baillet F, Chaussende D, Madar R
Materials Science Forum, 483, 3, 2005
3 Large area DPB free (111) beta-SiC thick layer grown on (0001) alpha-SIC nominal surfaces by the CF-PVT method
Chaussende D, Latu-Romain L, Auvray L, Ucar M, Pons M, Madar R
Materials Science Forum, 483, 225, 2005
4 Metal bonding in SiC based substrates
Matko I, Chenevier B, Madar R, Roussel H, Coindeau S, Letertre F, Richtarch C, Di Cioccio L
Materials Science Forum, 483, 781, 2005
5 Free growth of 4H-SiC by sublimation method
Dedulle JM, Anikin M, Pons M, Blanquet E, Pisch A, Madar R, Bernard C
Materials Science Forum, 457-460, 71, 2004
6 Characterization of thick 2-inch 4H-SiC layers grown by the Continuous Feed - Physical Vapor Transport method
Chaussende D, Balloud C, Auvray L, Baillet F, Zielinski M, Juillaguet S, Mermoux M, Pernot E, Camassel J, Pons M, Madar R
Materials Science Forum, 457-460, 91, 2004
7 Comparison between various chemical systems for the CVD step in the CF-PVT crystal growth method
Auvray L, Chaussende D, Baillet F, Charpentier L, Pons M, Madar R
Materials Science Forum, 457-460, 135, 2004
8 In situ SiC feeding by chemical vapor deposition for bulk growth
Charpentier L, Baillet F, Chaussende D, Auvray L, Pons M, Pernot E, Madar R
Materials Science Forum, 457-460, 139, 2004
9 Electron Back Scattering Diffraction (EBSD) as a tool for the investigation of 3C-SiC nucleation and growth on 6H or 4H
Chaussende D, Chaudouet P, Auvray L, Pons M, Madar R
Materials Science Forum, 457-460, 387, 2004
10 Vapor phase techniques for the fabrication of homoepitaxial layers of silicon carbide: process modeling and characterization
Pons M, Baillet F, Blanquet E, Pernot E, Madar R, Chaussende D, Mermoux M, Di Coccio L, Ferret P, Feuillet G, Faure C, Billon T
Applied Surface Science, 212, 177, 2003