검색결과 : 42건
No. | Article |
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1 |
Direct Bonding of Silicon to Platinum Dargent L, Bogumilowicz Y, Renault O, Ghyselen B, Madar R, Clavelier L Journal of the Electrochemical Society, 158(3), H255, 2011 |
2 |
Progress and limits of the numerical simulation of SiC bulk and epitaxy growth processes Pons M, Blanquet E, Dedulle JM, Ucar M, Wellmann P, Danielsson O, Ferret P, Di Cioccio L, Baillet F, Chaussende D, Madar R Materials Science Forum, 483, 3, 2005 |
3 |
Large area DPB free (111) beta-SiC thick layer grown on (0001) alpha-SIC nominal surfaces by the CF-PVT method Chaussende D, Latu-Romain L, Auvray L, Ucar M, Pons M, Madar R Materials Science Forum, 483, 225, 2005 |
4 |
Metal bonding in SiC based substrates Matko I, Chenevier B, Madar R, Roussel H, Coindeau S, Letertre F, Richtarch C, Di Cioccio L Materials Science Forum, 483, 781, 2005 |
5 |
Free growth of 4H-SiC by sublimation method Dedulle JM, Anikin M, Pons M, Blanquet E, Pisch A, Madar R, Bernard C Materials Science Forum, 457-460, 71, 2004 |
6 |
Characterization of thick 2-inch 4H-SiC layers grown by the Continuous Feed - Physical Vapor Transport method Chaussende D, Balloud C, Auvray L, Baillet F, Zielinski M, Juillaguet S, Mermoux M, Pernot E, Camassel J, Pons M, Madar R Materials Science Forum, 457-460, 91, 2004 |
7 |
Comparison between various chemical systems for the CVD step in the CF-PVT crystal growth method Auvray L, Chaussende D, Baillet F, Charpentier L, Pons M, Madar R Materials Science Forum, 457-460, 135, 2004 |
8 |
In situ SiC feeding by chemical vapor deposition for bulk growth Charpentier L, Baillet F, Chaussende D, Auvray L, Pons M, Pernot E, Madar R Materials Science Forum, 457-460, 139, 2004 |
9 |
Electron Back Scattering Diffraction (EBSD) as a tool for the investigation of 3C-SiC nucleation and growth on 6H or 4H Chaussende D, Chaudouet P, Auvray L, Pons M, Madar R Materials Science Forum, 457-460, 387, 2004 |
10 |
Vapor phase techniques for the fabrication of homoepitaxial layers of silicon carbide: process modeling and characterization Pons M, Baillet F, Blanquet E, Pernot E, Madar R, Chaussende D, Mermoux M, Di Coccio L, Ferret P, Feuillet G, Faure C, Billon T Applied Surface Science, 212, 177, 2003 |