검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
Sulfur passivation for the formation of Si-terminated Al2O3/SiGe(001) interfaces Sardashti K, Hu KT, Tang KC, Park S, Kim H, Madisetti S, McIntyre P, Oktyabrsky S, Siddiqui S, Sahu B, Yoshida N, Kachian J, Kummel A Applied Surface Science, 366, 455, 2016 |
| 2 |
Characterization of interface and border traps in ALD Al2O3/GaN MOS capacitors with two-step surface pretreatments on Ga-polar GaN Gu S, Chagarov EA, Min J, Madisetti S, Novak S, Oktyabrsky S, Kerr AJ, Kaufman-Osborn T, Kummel AC, Asbeck PM Applied Surface Science, 317, 1022, 2014 |
| 3 |
All in-situ GaSb MOS structures on GaAs (001): Growth, passivation and high-k oxides Tokranov V, Madisetti S, Yakimov M, Nagaiah P, Faleev N, Oktyabrsky S Journal of Crystal Growth, 378, 631, 2013 |
| 4 |
Improvement of the GaSb/Al2O3 interface using a thin InAs surface layer Greene A, Madisetti S, Nagaiah P, Yakimov M, Tokranov V, Moore R, Oktyabrsky S Solid-State Electronics, 78, 56, 2012 |