검색결과 : 10건
| No. | Article |
|---|---|
| 1 |
Ozone Based Atomic Layer Deposition of Hafnium Oxide and Impact of Nitrogen Oxide Species Delabie A, Swerts J, Van Elshocht S, Jung SH, Raisanen PI, Givens ME, Shero EJ, Peeters J, Machkaoutsan V, Maes JW Journal of the Electrochemical Society, 158(5), D259, 2011 |
| 2 |
Ozone-Based Metal Oxide Atomic Layer Deposition: Impact of N-2/O-2 Supply Ratio in Ozone Generation Delabie A, Caymax M, Gielis S, Maes JW, Nyns L, Popovici M, Swerts J, Tielens H, Peeters J, Van Elshocht S Electrochemical and Solid State Letters, 13(6), II176, 2010 |
| 3 |
Atomic Layer Deposition of Strontium Titanate Films Using Sr((Bu3Cp)-Bu-t)(2) and Ti(OMe)(4) Popovici M, Van Elshocht S, Menou N, Swerts J, Pierreux D, Delabie A, Brijs B, Conard T, Opsomer K, Maes JW, Wouters DJ, Kittl JA Journal of the Electrochemical Society, 157(1), G1, 2010 |
| 4 |
Impact of Precursor Chemistry and Process Conditions on the Scalability of ALD HfO2 Gate Dielectrics Swerts J, Peys N, Nyns L, Delabie A, Franquet A, Maes JW, Van Elshocht S, De Gendt S Journal of the Electrochemical Society, 157(1), G26, 2010 |
| 5 |
Alternative high-k dielectrics for semiconductor applications Van Elshocht S, Adelmann C, Clima S, Pourtois G, Conard T, Delabie A, Franquet A, Lehnen P, Meersschaut J, Menou N, Popovici M, Richard O, Schram T, Wang XP, Hardy A, Dewulf D, Van Bael MK, Lehnen P, Blomberg T, Pierreux D, Swerts J, Maes JW, Wouters DJ, De Gendt S, Kittl JA Journal of Vacuum Science & Technology B, 27(1), 209, 2009 |
| 6 |
Atomic layer deposition of hafnium silicate from HfCl4, SiCl4, and H2O Fedorenko Y, Swerts J, Maes JW, Tois E, Haukka S, Wang CG, Wilk G, Delabie A, Deweerd W, De Gendt S Electrochemical and Solid State Letters, 10(5), H149, 2007 |
| 7 |
Atomic layer deposition of hafnium silicate gate dielectric layers Delabie A, Pourtois G, Caymax M, De Gendt S, Ragnarsson LA, Heyns M, Fedorenko Y, Swerts J, Maes JW Journal of Vacuum Science & Technology A, 25(4), 1302, 2007 |
| 8 |
Evaluation of atomic layer deposited NbN and NbSiN as metal gate materials Van Hoornick N, De Witte H, Witters T, Zhao C, Conard T, Huotari H, Swerts J, Schram T, Maes JW, De Gendt S, Heyns M Journal of the Electrochemical Society, 153(5), G437, 2006 |
| 9 |
ALD of Ta(Si)N thin films using TDMAS as a reducing agent and as a Si precursor Alen P, Aaltonen T, Ritala M, Leskela M, Sajavaara T, Keinonen J, Hooker JC, Maes JW Journal of the Electrochemical Society, 151(8), G523, 2004 |
| 10 |
Silicon Point Contacts - Nanofabrication, Molecular-Beam Epitaxial-Growth, and Transport Measurements Maes JW, Caro J, Werner K, Radelaar S, Kozub VI, Zandbergen HW Journal of Vacuum Science & Technology B, 12(6), 3614, 1994 |