| 1 |
Near-surface secondary-ion-mass-spectrometry analyses of plasma-based B ion implants in Si
Buyuklimanli TH, Magee CW, Marino JW, Walther SR
Journal of Vacuum Science & Technology B, 24(1), 408, 2006 |
| 2 |
Using SIMS to diagnose color changes in heat treated gem sapphires
Novak SW, Magee CW, Moses T, Wang WY
Applied Surface Science, 231-2, 917, 2004 |
| 3 |
Using SIMS and the NIST standard reference material #2137 to calibrate standards used in the B-11 (p, alpha) Be-8 nuclear reaction analysis of B in Si
Magee CW, Jacobson DC
Applied Surface Science, 203, 310, 2003 |
| 4 |
Accuracy of secondary ion mass spectrometry in determining ion implanted B doses as confirmed by nuclear reaction analysis
Magee CW, Jacobson D, Gossmann HJ
Journal of Vacuum Science & Technology B, 18(1), 489, 2000 |
| 5 |
Techniques and applications of secondary ion mass spectrometry and spreading resistance profiling to measure ultrashallow junction implants down to 0.5 keV B and BF2
Harrington WL, Magee CW, Pawlik M, Downey DF, Osburn CM, Felch SB
Journal of Vacuum Science & Technology B, 16(1), 286, 1998 |
| 6 |
Sputtering rate change and surface roughening during oblique and normal incidence O-2(+) bombardment of silicon, with and without oxygen flooding
Magee CW, Mount GR, Smith SP, Herner B, Gossmann HJ
Journal of Vacuum Science & Technology B, 16(6), 3099, 1998 |
| 7 |
Comparison of Different Analytical Techniques in Measuring the Surface Region of Ultrashallow Doping Profiles
Felch SB, Chapek DL, Malik SM, Maillot P, Ishida E, Magee CW
Journal of Vacuum Science & Technology B, 14(1), 336, 1996 |
