화학공학소재연구정보센터
검색결과 : 8건
No. Article
1 Long range, non-destructive characterization of GaN substrates for power devices
Gallagher JC, Anderson TJ, Luna LE, Koehler AD, Hite JK, Mahadik NA, Hobart KD, Kub FJ
Journal of Crystal Growth, 506, 178, 2019
2 Homoepitaxial HVPE GaN: A potential substrate for high performance devices
Freitas JA, Culbertson JC, Mahadik NA, Tadjer MJ, Wu S, Raghothamachar B, Dudley M, Sochacki T, Bockowski M
Journal of Crystal Growth, 500, 104, 2018
3 Incorporation of pervasive impurities on HVPE GaN growth directions
Freitas JA, Culbertson JC, Mahadik NA, Glaser ER, Sochacki T, Bockowski M, Lee SK, Shim KB
Journal of Crystal Growth, 456, 101, 2016
4 HVPE GaN wafers with improved crystalline and electrical properties
Freitas JA, Culbertson JC, Mahadik NA, Sochacki T, Iwinska M, Bockowski MS
Journal of Crystal Growth, 456, 113, 2016
5 Trapezoid defect in 4H-SiC epilayers
Berechman RA, Chung S, Chung G, Sanchez E, Mahadik NA, Stahlbush RE, Skowronski M
Journal of Crystal Growth, 338(1), 16, 2012
6 Mitigating Defects within Silicon Carbide Epitaxy
Caldwell JD, Stahlbush RE, Mahadik NA
Journal of the Electrochemical Society, 159(3), R46, 2012
7 Ultra-low resistivity Al+ implanted 4H-SiC obtained by microwave annealing and a protective graphite cap
Sundaresan SG, Mahadik NA, Qadri SB, Schreifels JA, Tian YL, Zhang QC, Gomar-Nadal E, Rao MV
Solid-State Electronics, 52(1), 140, 2008
8 Double-crystal x-ray topography of freestanding HVPE grown n-type GaN
Mahadik NA, Qadri SB, Rao MV
Thin Solid Films, 516(2-4), 233, 2007