검색결과 : 8건
No. | Article |
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1 |
Long range, non-destructive characterization of GaN substrates for power devices Gallagher JC, Anderson TJ, Luna LE, Koehler AD, Hite JK, Mahadik NA, Hobart KD, Kub FJ Journal of Crystal Growth, 506, 178, 2019 |
2 |
Homoepitaxial HVPE GaN: A potential substrate for high performance devices Freitas JA, Culbertson JC, Mahadik NA, Tadjer MJ, Wu S, Raghothamachar B, Dudley M, Sochacki T, Bockowski M Journal of Crystal Growth, 500, 104, 2018 |
3 |
Incorporation of pervasive impurities on HVPE GaN growth directions Freitas JA, Culbertson JC, Mahadik NA, Glaser ER, Sochacki T, Bockowski M, Lee SK, Shim KB Journal of Crystal Growth, 456, 101, 2016 |
4 |
HVPE GaN wafers with improved crystalline and electrical properties Freitas JA, Culbertson JC, Mahadik NA, Sochacki T, Iwinska M, Bockowski MS Journal of Crystal Growth, 456, 113, 2016 |
5 |
Trapezoid defect in 4H-SiC epilayers Berechman RA, Chung S, Chung G, Sanchez E, Mahadik NA, Stahlbush RE, Skowronski M Journal of Crystal Growth, 338(1), 16, 2012 |
6 |
Mitigating Defects within Silicon Carbide Epitaxy Caldwell JD, Stahlbush RE, Mahadik NA Journal of the Electrochemical Society, 159(3), R46, 2012 |
7 |
Ultra-low resistivity Al+ implanted 4H-SiC obtained by microwave annealing and a protective graphite cap Sundaresan SG, Mahadik NA, Qadri SB, Schreifels JA, Tian YL, Zhang QC, Gomar-Nadal E, Rao MV Solid-State Electronics, 52(1), 140, 2008 |
8 |
Double-crystal x-ray topography of freestanding HVPE grown n-type GaN Mahadik NA, Qadri SB, Rao MV Thin Solid Films, 516(2-4), 233, 2007 |