검색결과 : 7건
| No. | Article |
|---|---|
| 1 |
Crystal growth and characterization of thick GaN layers grown by oxide vapor transport technique Konkapaka P, Raghothamachar B, Dudley M, Makarov Y, Spencer MG Journal of Crystal Growth, 289(1), 140, 2006 |
| 2 |
Reactor and growth process optimization for growth of thick GaN layers on sapphire substrates by HVPE Richter E, Hennig C, Weyers M, Habel F, Tsay JD, Liu WY, Bruckner P, Scholz F, Makarov Y, Segal A, Kaeppeler J Journal of Crystal Growth, 277(1-4), 6, 2005 |
| 3 |
Computational analysis of GaN/InGaN deposition in MOCVD vertical rotating disk reactors Kadinski L, Merai V, Parekh A, Ramer J, Armour EA, Stall R, Gurary A, Galyukov A, Makarov Y Journal of Crystal Growth, 261(2-3), 175, 2004 |
| 4 |
Parametric studies of III-nitride MOVPE in commercial vertical high-speed rotating disk reactors Lobanova A, Mazaev K, Yakovlev E, Talalaev R, Galyukov A, Makarov Y, Gotthold D, Albert B, Kadinski L, Peres B Journal of Crystal Growth, 266(1-3), 354, 2004 |
| 5 |
Analysis of graphitization during physical vapor transport growth of silicon carbide Wellmann PJ, Herro Z, Sakwe SA, Masri P, Bogdanov M, Karpov S, Kulik A, Ramm M, Makarov Y Materials Science Forum, 457-460, 55, 2004 |
| 6 |
Experimental and theoretical analysis of sublimation growth of bulk AlN crystals Mokhov E, Smirnov S, Segal A, Bazarevskiy D, Makarov Y, Ramm M, Helava H Materials Science Forum, 457-460, 1545, 2004 |
| 7 |
Global numerical simulation of heat and mass transfer for SiC bulk crystal growth by PVT Selder M, Kadinski L, Makarov Y, Durst F, Wellmann P, Straubinger T, Hofmann D, Karpov S, Ramm M Journal of Crystal Growth, 211(1-4), 333, 2000 |